Optical properties of MnTe2 few-layer quantum dots
subject: DFT; MnTe2; Photoluminescence; QDs
description: Quantum dots (QDs) are gaining attention as a possible emissive material that might be used in flexible optoelectronic and photonic systems. In the present work, the temperature-dependent photoluminescence (TDPL) property of manganese di-telluride (MnTe2) QDs was investigated. The room-temperature PL is attributed to the abrupt breakage of the large-area MnTe2 nanosheets by ultrasonication, which integrates defect-mediated localized trap states inside the electronic bandgap. As a result, deliberately generated defect states ultimately generate such PL emission of QDs. Density functional theory (DFT) results further validate the experimental interpretations of the origin of TDPL. In addition, through an in-situ liquid diffusion approach, the QDs were also integrated into a NaCl matrix. Due to light scattering properties, the hybrid crystals exhibit fluorescence centres at various excitation wavelengths. These results suggest that these MnTe2 QDs can be used as an effective basis for future flexible optoelectronic applications. 2024 Elsevier B.V.
creator: Ninan G.G.; Varghese M.; Gowda C.C.; Bylappa Y.; Nag A.; Balachandran M.; Junior L.R.; Tromer R.; Galvao D.S.; Tiwary C.S.; Kumbhakar P.
source: Optical Materials, Vol-159
publisher: Elsevier B.V.
date: 2025-01-01
rights: Restricted Access
relation: ISSN: 9253467; CODEN: OMATE
format: Online
language: English
type: Article
coverage: Ninan G.G., Department of Physical Sciences and Mathematics, St. Francis de Sales College (Autonomous), Electronics City, Karnataka, Bengaluru, 560100, India, Department of Physics and Electronics, CHRIST (Deemed to be University), Bangalore, 560029, India; Varghese M., Department of Physics and Electronics, CHRIST (Deemed to be University), Bangalore, 560029, India; Gowda C.C., School of Nano Science and Technology, Indian Institute of Technology, West Bengal, Kharagpur, 721302, India; Bylappa Y., Department of Life Science, CHRIST (Deemed to be University), Bangalore, 560029, India; Nag A., Department of Life Science, CHRIST (Deemed to be University), Bangalore, 560029, India; Balachandran M., Department of Physics and Electronics, CHRIST (Deemed to be University), Bangalore, 560029, India; Junior L.R., Institute of Physics, University of Brasilia, DF, Brasilia, 70910-970, Brazil; Tromer R., Applied Physics Department, State University of Campinas, SP, Campinas, 13083-970, Brazil; Galvao D.S., Applied Physics Department, State University of Campinas, SP, Campinas, 13083-970, Brazil; Tiwary C.S., School of Nano Science and Technology, Indian Institute of Technology, West Bengal, Kharagpur, 721302, India, Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India; Kumbhakar P., Department of Physics and Electronics, CHRIST (Deemed to be University), Bangalore, 560029, India, Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India