Novel super stack passivation in AlGaN/GaN HEMT for power electronic applications

Title

Novel super stack passivation in AlGaN/GaN HEMT for power electronic applications

Creator

Arunraja A.; Suresh K.; Senthilnathan S.

Description

A super-stack passivation technique is proposed for an AlGaN/GaN HEMT in order to improve the breakdown voltage and cutoff frequency. The performance of the proposed technique is benchmarked against a conventional GaN HEMT. The analysis and investigation are carried out using Technology Computer-Aided Design (TCAD). The simulation results are validated with experimental data. It is observed that the breakdown voltage of the conventional and proposed devices is 356V and 449V, respectively. In contrast to the conventional device, the breakdown voltage of the proposed device is improved by 21%. This is the manifestation of the suppression of the electric field by the super-stack passivation technique in the proposed device. Furthermore, it is also observed that the Johnsons figure of merit in the proposed GaN-HEMT is also improved. 2024 The Author(s). Published by IOP Publishing Ltd.

Source

Materials Research Express, Vol-11, No. 11

Date

2024-01-01

Publisher

Institute of Physics

Subject

AlGaN/GaN interface; current collapse; Johnson figure of merit; surface passivation

Coverage

Arunraja A., Department of ECE, Christ University, Kanminike Kumbalgodu Kengeri, Karnataka, Bangalore, 560029, India; Suresh K., Department of EEE, Christ University, Kanminike Kumbalgodu Kengeri, Karnataka, Bangalore, 560029, India; Senthilnathan S., Department of ECE, Christ University, Kanminike Kumbalgodu Kengeri, Karnataka, Bangalore, 560029, India

Rights

All Open Access; Gold Open Access

Relation

ISSN: 20531591

Format

Online

Language

English

Type

Article

Identifier

https://doi.org/10.1088/2053-1591/ad8861

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