Terahertz-based optoelectronic properties of ZnS quantum dot-polymer composites: For device applications
Fluorescence; Optical impedance; Refractive Index; THz; ZnS
Terahertz (THz) technology integration with nanomaterials is receiving excellent attention for next-generation applications, including enhanced imaging and communication. The excellent optical properties in THz domain can lead to preparation of low-cost CMOS camera which can convert THz radiation into optical signal in very efficient manner. In the present study, we have studied the properties of Zinc Sulfide quantum dots (ZnS QDs) embedded with Polyvinyl Alcohol (PVA) composites films using THz Signal at room temperature. The optical characterizations such as refractive index, absorption coefficients and dielectric constants of these samples were measured in the 0.12.0 THz range. Additionally, optical impedance, surface roughness, and reflection coefficient in TE and TM mode between 0.1 and 2.0 THz range were determined for these samples based on surface roughness-based reflection and scattering properties. The surface roughness factor was used to measure the optical impedance of the ZnS QDs based polymer films. The measured values of the absorption coefficient at 266 nm are compared with THz radiation, and the refractive indices of these samples range from 1.75 to 2.0. Finally, these samples were subjected to UV light excitation (?exe = 266 nm) of 0.15 ns duration and 400 nm for the fluorescence and corresponding life time measurements. We observed two numbers of fluorescence lines in nanosecond based excited domain whereas 400 nm excitation-based fluorescence life time lies between 13.811.39 ns range along with shift in fluorescence lines between 538.7 to 560.7 nm, respectively. 2024
Ghorui C.; Kumbhakar P.; Vs Kidavu A.; Kumbhakar P.; Chaudhary A.K.
Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy, Vol-321
ISSN: 13861425; PubMed ID: 38959691; CODEN: SAMCA
https://doi.org/10.1016/j.saa.2024.124697 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85197231131&doi=10.1016%2fj.saa.2024.124697&partnerID=40&md5=a01549b23a80ed7b7d134bc4ef3e37a6
Ghorui C., Advanced Centre for Research in High Energy Materials (ACRHEM, DIA-CoE), School of Physics, University of Hyderabad, Telangana, 500046, India; Kumbhakar P., Nanoscience Laboratory, Dept. of Physics, National Institute of Technology Durgapur, West Bengal, 713209, India, Department of Physics and Electronics, CHRIST (Deemed to be University), Karnataka, Bengaluru, 560029, India; Vs Kidavu A., Advanced Centre for Research in High Energy Materials (ACRHEM, DIA-CoE), School of Physics, University of Hyderabad, Telangana, 500046, India; Kumbhakar P., Nanoscience Laboratory, Dept. of Physics, National Institute of Technology Durgapur, West Bengal, 713209, India; Chaudhary A.K., Advanced Centre for Research in High Energy Materials (ACRHEM, DIA-CoE), School of Physics, University of Hyderabad, Telangana, 500046, India