Structural, optical and electrochromic properties of WAW films for profound electrochromic applications deposited by DC & RF magnetron sputtering
Electrochromism; Sputtering and colorationefficiency; Tungsten oxide (WO3); WO3/Ag/WO3 (WAW)
One of the most frequently used transition conducting oxides (TCO) is indium tin oxide. Indium is very expensive because of the lack of availability. So Most of the researchers focused on cost-effective materials and they have developed Dielectric/Metal/Dielectric (DMD) structures for ITO-free applications. Examples of dielectric materials are AZO, MoO3, TiO2, and WO3. The dielectric material is sandwiched between metals such as Au, Ag, Pt, Cu, and Al. The efficacy of these DMD structures is purely based on the thickness of the dielectric and metal layers. Once the metal layer thickness is more than 15 nm, the transmittance is much less due to the thickness of the material and it will work as a reflector. Moreover, as WO3 is the most widely and frequently used material we focus on the fabrication of WO3/Ag/WO3 (WAW) for replacing TCO in the electrochromic device and making it indium-free. WAW structures are widely used in smart windows, gas sensors, solar cells, photodetectors, etc. For electrochromic applications, these WAW structures showed good transmittance, fast switching speed, best coloration efficiency, and best optical modulation in comparison to WO3/ITO structure and are also cost-effective. 2024 The Author(s)
Kumar K.N.; Shaik H.; Sattar S.A.; V A.R.G.; Mangiri R.; Jafri R.I.; Premkumar R.; Govindharaju R.; Juliet B.M.; Ansar S.
All Open Access; Hybrid Gold Open Access
https://doi.org/10.1016/j.chphi.2024.100566 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85188003026&doi=10.1016%2fj.chphi.2024.100566&partnerID=40&md5=610b1927774e9f0b63f50e99a3b1c504
Kumar K.N., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Shaik H., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Sattar S.A., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; V A.R.G., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Mangiri R., Department of Energy Systems Engineering, Seoul National University, Seoul, 08826, South Korea; Jafri R.I., Department of Physics and Electronics, Christ University, Hosur Road, Bengaluru, 560029, India; Premkumar R., Department of Physics, N.M.S.S.V.N. College, Nagamalai, Tamil Nadu, Madurai, 625019, India; Govindharaju R., Department of Chemistry, Thanthai Hans Roever College (Autonomous), (Affiliated to Bharathidasan University, Tiruchirappalli), Tamil Nadu, Perambalur, 621 220, India; Juliet B.M., Department of Chemistry, Thanthai Hans Roever College (Autonomous), (Affiliated to Bharathidasan University, Tiruchirappalli), Tamil Nadu, Perambalur, 621 220, India; Ansar S., Department of Clinical Laboratory Sciences, College of Applied Medical Sciences, King Saud University, P.O. Box 10219, Riyadh, 11433, Saudi Arabia