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Title A name given to the resource Synthesis, Green Photoluminescence and Studies of Nonlinear Optical Spatial Self Phase Modulation Effect in 2D Ga2Te3 Nanosheets Subject The topic of the resource 2D Ga2Te3; 2D material; Liquid Phase exfoliation; Nonlinear Optics; Photoluminescence Description An account of the resource The liquid-phase exfoliation (LPE) technique has been employed to prepare two-dimensional (2D) gallium telluride (Ga2Te3) nanosheets with an average thickness of ?2.4 nm and linear optical properties, including UV-visible absorption and photoluminescence (PL) emission characteristics of the sample in the green wavelength region are reported. The third-order nonlinear optical (NLO) responses of the colloidal suspension of 2D Ga2Te3 are determined at 532 and 632 nm wavelengths by a spatial self-phase modulation (SSPM) experiment. The value of the third-order NLO refraction coefficient (n2e) and effective susceptibility for monolayer (?(3)Mono) 2D Ga2Te3 under 532 (632) nm continuous wave (CW) excitation is extracted to be 2.60 10-7 (0.32 10-7) cm2/W and 1.12 10-9 (1.37 10-10) e.s.u., respectively. The origin of the observed SSPM patterns under 532 nm excitation was elucidated theoretically. Finally, the correlation of ?(3)Mono with the mobility of charge carriers for a vast number of 2D materials is utilized to establish the origin of the observed NLO effect under 532 nm pump laser radiation in the 2D Ga2Te3. Additionally, NLO absorption coefficients of 2D Ga2Te3 have been extracted using the femtosecond Z-scan technique at 800 nm. We observed a switching behavior (saturable to threephoton absorption) in the nonlinear absorption mechanism with different input peak intensities. The highest three-photon absorption coefficient of ?1.68 cm3/GW2 was observed for a 350 GW/cm2 peak intensity. We believe that such reports of interesting linear and NLO properties of this newly synthesized 2D material can be utilized in the future for a wide number of optoelectronic applications. 2023 American Chemical Society. Creator An entity primarily responsible for making the resource Pramanik A.; Kumbhakar P.; Dey A.; Mondal K.; Banerjee D.; Soma V.R.; Kumbhakar P.; Tiwary C.S. Source A related resource from which the described resource is derived ACS Applied Optical Materials, Vol-1, No. 10, pp. 1634-1642. Publisher An entity responsible for making the resource available American Chemical Society Date A point or period of time associated with an event in the lifecycle of the resource 2023-01-01 Identifier An unambiguous reference to the resource within a given context <a href="https://doi.org/10.1021/acsaom.3c00119" target="_blank" rel="noreferrer noopener">https://doi.org/10.1021/acsaom.3c00119</a> <a href="https://www.scopus.com/inward/record.uri?eid=2-s2.0-85186214476&doi=10.1021%2Facsaom.3c00119&partnerID=40&md5=461a7625006e20238613fb2769d670e0" target="_blank" rel="noreferrer noopener">https://www.scopus.com/inward/record.uri?eid=2-s2.0-85186214476&doi=10.1021%2facsaom.3c00119&partnerID=40&md5=461a7625006e20238613fb2769d670e0</a> Rights Information about rights held in and over the resource Restricted Access Relation A related resource ISSN: 27719855 Format The file format, physical medium, or dimensions of the resource Online Language A language of the resource English Type The nature or genre of the resource Article Coverage The spatial or temporal topic of the resource, the spatial applicability of the resource, or the jurisdiction under which the resource is relevant Pramanik A., Nanoscience Laboratory, Department of Physics, National Institute of Technology, West Bengal, Durgapur, 713209, India, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India; Kumbhakar P., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India, Department of Physics and Electronics, CHRIST, Deemed to be University, Bangalore, 560029, India; Dey A., Nanoscience Laboratory, Department of Physics, National Institute of Technology, West Bengal, Durgapur, 713209, India; Mondal K., Nanoscience Laboratory, Department of Physics, National Institute of Technology, West Bengal, Durgapur, 713209, India; Banerjee D., Advanced Centre of Research in High Energy Materials (ACRHEM), DRDO Industry Academia - Centre of Excellence (DIA-COE), University of Hyderabad, Telangana, Hyderabad, 500046, India; Soma V.R., Advanced Centre of Research in High Energy Materials (ACRHEM), DRDO Industry Academia - Centre of Excellence (DIA-COE), University of Hyderabad, Telangana, Hyderabad, 500046, India; Kumbhakar P., Nanoscience Laboratory, Department of Physics, National Institute of Technology, West Bengal, Durgapur, 713209, India; Tiwary C.S., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India