ItemArticle

Effect of partial pressure of oxygen, target current, and annealing on DC sputtered tungsten oxide (WO3) thin films for electrochromic applications

Title
Effect of partial pressure of oxygen, target current, and annealing on DC sputtered tungsten oxide (WO3) thin films for electrochromic applications
Creator
Kumar K.N.; Sattar S.A.; Shaik H.; G V A.R.; Jafri R.I.; Dhananjaya M.; Pawar A.S.; Prakash N.G.; Premkumar R.; Ansar S.; Chandrashekar L.N.; Aishwarya P.
Description
Tungsten oxide (WO3) thin films were prepared on Corning (CG) and Fluorine doped tin oxide (FTO) glass substrates at partial pressure of oxygen (pO2) 4 10?2 Pa and 8 10?2 Pa using DC magnetron sputtering (DCMs). In this work, we have varied the deposition parameters like pO2, target currents, and temperature. At pO2 4 10?2 Pa and 8 10?2 Pa samples were deposited at target currents of 50 mA and 100 mA, the maintained growth conditions are RT (substrate temperature 28 C), Pre annealed (substrate temperature 400 C), and Post annealed (annealing temperature 400 C). The samples were systematically characterized for vibrational, structural, optical, and Electrochromic (EC) properties by using Raman, XRD, Uv-Vis spectrometer, and Electrochemical analyzer respectively. XRD analysis reveals that RT-deposited samples show amorphous nature and pre & post-annealed samples show a crystalline nature for both pO2. Optical transmittance was higher at RT-deposited samples at 50 mA (94% & 92%) and lower at 100 mA (87% & 85%) at the wavelength of 600 nm for both pO2. From CV analysis higher cathodic peak current density was observed in RT-deposited samples at 50 mA (?6.49 mAcm?2 & -13.80 mAcm?2) and lower at 100 mA (?5.25 mAcm?2 & -12.88 mAcm?2) for both pO2. The diffusion coefficient was observed at a higher target current at 100 mA (1.06 10?7 cm2/s & 9.20 10?8 cm2/s). For annealed samples optical and EC properties were decreased for both pO2. 2023 Elsevier B.V.
Source
Solid State Ionics, Vol-399
Date
2023-01-01
Publisher
Elsevier B.V.
Subject
EC properties; Optical transmittance; pO2; Sputtering; Target current; Temperature
Coverage
Kumar K.N., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Sattar S.A., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Shaik H., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; G V A.R., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Jafri R.I., Department of Physics and Electronics, Christ University, Hosur Road, Bengaluru, 560029, India; Dhananjaya M., School of Mechanical Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsangbuk-do, Gyoungsan-si, 38541, South Korea; Pawar A.S., Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Department of VLSI Design, Manipal School of Information, Karnataka, Manipal, 576104, India; Prakash N.G., School of Mechanical Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsangbuk-do, Gyoungsan-si, 38541, South Korea; Premkumar R., Department of Physics, N.M.S.S.V.N. College, Nagamalai, Tamil Nadu, Madurai, 625019, India; Ansar S., Department of Clinical Laboratory Sciences, College of Applied Medical Sciences, King Saud University, P.O. Box 10219, Riyadh, 11433, Saudi Arabia; Chandrashekar L.N., Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Aishwarya P., Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India
Rights
Restricted Access
Relation
ISSN: 1672738; CODEN: SSIOD
Format
Online
Language
English
Type
Article

Collection

Articles

Citation

Kumar K.N.; Sattar S.A.; Shaik H.; G V A.R.; Jafri R.I.; Dhananjaya M.; Pawar A.S.; Prakash N.G.; Premkumar R.; Ansar S.; Chandrashekar L.N.; Aishwarya P., “Effect of partial pressure of oxygen, target current, and annealing on DC sputtered tungsten oxide (WO3) thin films for electrochromic applications,” CHRIST (Deemed To Be University) Institutional Repository, accessed February 27, 2025, https://archives.christuniversity.in/items/show/13980.

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