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              <text>Structural, optical, and electrochromic properties of RT and annealed sputtered tungsten trioxide (WO3) thin films for electrochromic applications by using GLAD technique</text>
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              <text>Tungsten oxide (WO3) thin films were prepared on the GLAD DC magnetron sputtering (GDMS) and substrate angles were varied from 70 to 80. The WO3 thin films were deposited at room temperature (RT) on corning glass (CG) and fluorine-doped tin oxide (FTO), and substrates and annealed at 400C/2h. The XRD, UvVis spectrometer, and electrochemical analyzer were used to determine the structural, optical, and electrochromic (EC) properties. According to an XRD study, RT-deposited samples were amorphous, but annealed samples displayed crystalline structures. The optical transmittance of RT and annealed samples varied from 59 to 71% and 14 to 28% respectively. The colored/bleached ability of the cyclic voltammograms was RT samples shows greater than in annealed samples. Since the coloration ability and diffusion coefficient of WO3 RT samples show greater than annealed samples.  2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.</text>
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              <text>Kumar K.N.; Sattar S.A.; Ashok Reddy G.V.; Jafri R.I.; Premkumar R.; Meera M.R.; Ahamed A.A.; Muthukrishnan M.; Dhananjaya M.; Tighezza A.M.</text>
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              <text>Journal of Materials Science: Materials in Electronics, Vol-34, No. 28</text>
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              <text>2023-01-01</text>
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              <text>&lt;a href="https://doi.org/10.1007/s10854-023-11285-x" target="_blank" rel="noreferrer noopener"&gt;https://doi.org/10.1007/s10854-023-11285-x&lt;/a&gt;
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              <text>ISSN: 9574522</text>
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              <text>Online</text>
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              <text>English</text>
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              <text>Kumar K.N., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-Materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Sattar S.A., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Ashok Reddy G.V., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Jafri R.I., Department of Physics and Electronics, Christ University, Hosur Road, Bengaluru, 560029, India; Premkumar R., Department of Physics, N.M.S.S.V.N. College, Nagamalai, Tamil Nadu, Madurai, 625019, India; Meera M.R., Department of Physics, Sree Ayyappa College for Women, Chunkankadai, Tamil Nadu, Nagercoil, 629 003, India; Ahamed A.A., Department of Chemistry, Jamal Mohamed College (Autonomous), Affiliated to Bharathidasan University Trichy, Tamil Nadu, Tiruchirappalli, 620020, India; Muthukrishnan M., Department of Physics, Sona College of Technology, Tamil Nadu, Salem, 636005, India; Dhananjaya M., School of Mechanical Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsangbuk-do, Gyoungsan-si, 38541, South Korea; Tighezza A.M., Department of Chemistry, College of Science, King Saud University, P. O. Box 2455, Riyadh, 11451, Saudi Arabia</text>
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