Anomalous indirect carrier relaxation in direct band gap atomically thin gallium telluride
description: We report ultrafast studies on atomically thin Gallium telluride, a 2D metal monochalcogenide that has appeared to display superior photodetection properties in visible frequencies. Pump photon energy-dependent spectroscopic studies reveal that photoinduced carriers in this direct band-gap material undergo indirect relaxation within ?30 ps of photoexcitation, which is at least an order slower than that of most 2D materials. Despite the direct band-gap nature, slow and indirect carrier relaxation places this layered material as a prime candidate in the multitude of atomically thin semiconductor-based photodetectors and highlights the potential for prospective optoelectronic applications. 2023 American Physical Society.
creator: Karmakar M.; Kumbhakar P.; Singha T.; Tiwary C.S.; Chanda D.; Datta P.K.
source: Physical Review B, Vol-107, No. 7
publisher: American Physical Society
date: 2023-01-01
rights: Restricted Access
relation: ISSN: 24699950
format: Online
language: English
type: Article
coverage: Karmakar M., Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India, NanoScience Technology Center, University of Central Florida, Orlando, 32826, FL, United States, CREOL, College of Optics and Photonics, University of Central Florida, Orlando, 32826, FL, United States; Kumbhakar P., Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India, NanoScience Technology Center, University of Central Florida, Orlando, 32826, FL, United States, Department of Physics, University of Central Florida, Orlando, 32826, FL, United States; Singha T., Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India, NanoScience Technology Center, University of Central Florida, Orlando, 32826, FL, United States; Tiwary C.S., Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India, NanoScience Technology Center, University of Central Florida, Orlando, 32826, FL, United States; Chanda D., NanoScience Technology Center, University of Central Florida, Orlando, 32826, FL, United States, Department of Physics and Electronics, CHRIST (Deemed to be University), Bangalore, 560029, India; Datta P.K., NanoScience Technology Center, University of Central Florida, Orlando, 32826, FL, United States