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            <name>Title</name>
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    <name>Article</name>
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          <name>Title</name>
          <description>A name given to the resource</description>
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              <text>Effect of substrate temperature on the properties of spray deposited Ga2O3 thin films, for solar blind UV detector applications</text>
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          <name>Subject</name>
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              <text>Gallium oxide; Semiconductor; Spray pyrolysis; Substrate temperature; Thin films; U V detector</text>
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              <text>In this work, Ga2O3 thin films were deposited on glass substrates by chemical spray pyrolysis technique at three different substrate temperatures 350 C, 400 C, and 450 C. The structural, optical, morphological and electrical characteristics of the deposited sample thin films were investigated. From the studies, it is understood that by tuning substrate temperature, we can extensively change the properties of the film. Optimum temperature for coating Ga2O3 thin films was understood and the work was extended to demonstrate a simple deep UV detector, working in photoconductive mode. The fabricated device exhibit medium response to UV light at 254 nm. The present work report the fabrication of solar blind UV detector based on Ga2O3 thin film, grown using low cost, easily scalable spray deposition technique.  2022 Elsevier B.V.</text>
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          <name>Creator</name>
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              <text>Raphael R.; Devasia S.; Shaji S.; Anila E.I.</text>
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              <text>Optical Materials, Vol-133</text>
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              <text>Elsevier B.V.</text>
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          <name>Date</name>
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              <text>2022-01-01</text>
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              <text>&lt;a href="https://doi.org/10.1016/j.optmat.2022.112915" target="_blank" rel="noreferrer noopener"&gt;https://doi.org/10.1016/j.optmat.2022.112915&lt;/a&gt;
&lt;br /&gt;&lt;br /&gt;&lt;a href="https://www.scopus.com/inward/record.uri?eid=2-s2.0-85137101974&amp;amp;doi=10.1016%2Fj.optmat.2022.112915&amp;amp;partnerID=40&amp;amp;md5=18f166e614a4743121477336a4c17553" target="_blank" rel="noreferrer noopener"&gt;https://www.scopus.com/inward/record.uri?eid=2-s2.0-85137101974&amp;amp;doi=10.1016%2fj.optmat.2022.112915&amp;amp;partnerID=40&amp;amp;md5=18f166e614a4743121477336a4c17553&lt;/a&gt;</text>
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          <name>Rights</name>
          <description>Information about rights held in and over the resource</description>
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            <elementText elementTextId="103843">
              <text>Restricted Access</text>
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          <description>A related resource</description>
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              <text>ISSN: 9253467; CODEN: OMATE</text>
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              <text>Online</text>
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              <text>English</text>
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              <text>Raphael R., Optoelectronics and Nanomaterials' Research Laboratory, Department of Physics, Union Christian College, Kerala, Aluva, 683102, India; Devasia S., Optoelectronics and Nanomaterials' Research Laboratory, Department of Physics, Union Christian College, Kerala, Aluva, 683102, India, Facultad de Ingenier Mecica y Eltrica, Universidad Automa de Nuevo Le, Nuevo Le, SanNicol de los Garza, Mexico; Shaji S., Facultad de Ingenier Mecica y Eltrica, Universidad Automa de Nuevo Le, Nuevo Le, SanNicol de los Garza, Mexico; Anila E.I., Optoelectronics and Nanomaterials' Research Laboratory, Department of Physics, Union Christian College, Kerala, Aluva, 683102, India, Department of Physics, CHRIST (Deemed to Be University), Bengaluru, 560029, India</text>
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