Physical vapor deposition and enhancement of optoelectronic properties of SnSe2 platelets
Stoichiometric tin diselenide (SnSe2) platelet crystals have been prepared by physical vapor deposition (PVD) method under high vacuum (~ 106mbar) using a homemade dual-zone furnace. The driving force for growth was optimized in terms of temperature difference (?T = 270 to 420C) of nutrient and growth zones. Good quality platelets, devoid of any screw dislocations, hillocks, defects etc. were crystallized at ?T = 400C by layer growth mode as per the 3D optical profiler and electron microscopic images. Rietveld refinement of the PXRD data using FullProf suite software justified hexagonal crystal structure with a = 3.811 c = 6.137and the computed density (5.967g/cm3) is in agreement with that obtained based on Archimedes principle. Chemical homogeneity of these samples was probed by EDAX, XPS and Raman analysis. The thermal and mechanical behavior was investigated by TGA as well as Vickers microhardness experiments. The values of optical band gap (1.20eV), absorption coefficient (7.25 105cm?1), resistivity (2.70 ? cm), mobility (32.70 cm2V?1s?1) and carrier concentration (3.08 1016cm?3) have been evaluated using UVVis-NIR, photoluminescence, and Hall effect measurements. The enhancement of optoelectronic parameters of the as-grown SnSe2 platelets free of polytypism, throws light on their potential for photovoltaic applications. 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
Journal of Materials Science: Materials in Electronics, Vol-33, No. 35, pp. 26397-26413.
Bibin J., Department of Physics and Electronics, CHRIST (Deemed to be University), Karnataka, Bangalore, 560029, India; Kunjomana A.G., Department of Physics and Electronics, CHRIST (Deemed to be University), Karnataka, Bangalore, 560029, India; Teena M., Department of Physics, St. Thomas College, Kerala, Palai, 686574, India