Dublin Core The Dublin Core metadata element set is common to all Omeka records, including items, files, and collections. For more information see, http://dublincore.org/documents/dces/. Title A name given to the resource Articles Article Faculty Publications -Articles Dublin Core The Dublin Core metadata element set is common to all Omeka records, including items, files, and collections. For more information see, http://dublincore.org/documents/dces/. Title A name given to the resource Glancing angle sputter deposited tungsten trioxide (WO3) thin films for electrochromic applications Subject The topic of the resource Coloration efficiency; Diffusion coefficient; Electrochromism; Glancing angle deposition; Transmittance; Tungsten oxide films Description An account of the resource The columnar growth angle-dependent tungsten oxide (WO3) thin films were grown by using the Glancing angle sputter deposition (GLAD) technique with varying different substrate angles (00, 700, 750, and 800) on Fluorine-doped tin oxide (FTO) and Corning glass (CG) corning glass substrates at room temperature. The surface morphology, crystallographic structure, optical, and electrochemical properties were determined using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), UltravioletVisible(UVVis) spectrometer, and electrochemical analyzer, respectively. The structural properties reveal that the films are amorphous in nature. FE-SEM studies observed the columnar growth of the nano-rods and surface porosity. The optical transmittance of the deposited films was decreased from 83 to 78%, and the optical bandgap decreased from 3.08 to 2.88eV with increasing GLAD angle. The electrochemical studies reveal that the GLAD angle influenced the coloration efficiency (CE). The highest CE of 32cm2/C at 600nm and highest Diffusion coefficient (DC) of 6.529 109 cm2s?1 of the films was observed for the films deposited at an angle of 750. 2022, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature. Creator An entity primarily responsible for making the resource Naveen Kumar K.; Shaik H.; Madhavi V.; Imran Jafri R.; Gupta J.; Nithya G.; Sattar S.A.; Ashok Reddy G.V. Source A related resource from which the described resource is derived Applied Physics A: Materials Science and Processing, Vol-128, No. 11 Publisher An entity responsible for making the resource available Springer Science and Business Media Deutschland GmbH Date A point or period of time associated with an event in the lifecycle of the resource 2022-01-01 Identifier An unambiguous reference to the resource within a given context <a href="https://doi.org/10.1007/s00339-022-06124-5" target="_blank" rel="noreferrer noopener">https://doi.org/10.1007/s00339-022-06124-5</a> <br /><br /><a href="https://www.scopus.com/inward/record.uri?eid=2-s2.0-85140208124&amp;doi=10.1007%2Fs00339-022-06124-5&amp;partnerID=40&amp;md5=32e6b63b0aae20884c50441803779a12" target="_blank" rel="noreferrer noopener">https://www.scopus.com/inward/record.uri?eid=2-s2.0-85140208124&amp;doi=10.1007%2fs00339-022-06124-5&amp;partnerID=40&amp;md5=32e6b63b0aae20884c50441803779a12</a> Rights Information about rights held in and over the resource Restricted Access Relation A related resource ISSN: 9478396; CODEN: APAMF Format The file format, physical medium, or dimensions of the resource Online Language A language of the resource English Type The nature or genre of the resource Article Coverage The spatial or temporal topic of the resource, the spatial applicability of the resource, or the jurisdiction under which the resource is relevant Naveen Kumar K., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bangalore, 560064, India, Center for Nanomaterials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bangalore, 560064, India; Shaik H., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bangalore, 560064, India, Center for Nanomaterials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bangalore, 560064, India; Madhavi V., Interdisciplinary Centre for Energy Research, Indian Institute of Science, Bangalore, 560012, India; Imran Jafri R., Department of Physics and Electronics, Christ University, Hosur Road, Bangalore, 560029, India; Gupta J., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bangalore, 560064, India, Center for Nanomaterials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bangalore, 560064, India; Nithya G., Center for Nanomaterials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bangalore, 560064, India, Department of ECE, Nitte Meenakshi Institute of Technology, Yelahanka, Bangalore, 560064, India; Sattar S.A., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bangalore, 560064, India; Ashok Reddy G.V., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bangalore, 560064, India, Department of Physics, SJB Institute of Technology, Kengeri, Karnataka, Bangalore, 560060, India