Dublin Core The Dublin Core metadata element set is common to all Omeka records, including items, files, and collections. For more information see, http://dublincore.org/documents/dces/. Title A name given to the resource Articles Article Faculty Publications -Articles Dublin Core The Dublin Core metadata element set is common to all Omeka records, including items, files, and collections. For more information see, http://dublincore.org/documents/dces/. Title A name given to the resource Architecture of FTO/n-CdS/p-SnSe1-xOx/Au Heterojunction Thin Film Diodes by Thermal Evaporation Subject The topic of the resource currentvoltage characteristics; diode; Oxygen-doped SnSe thin film; thermal evaporation Description An account of the resource In this report, FTO/n-CdS/p-SnSe1-xOx/Au heterojunction diodes were fabricated using a homemade precursor followed by dry milling with a facile thermal evaporation method under oxygen atmosphere (10? 2mbar) for the first time. The chemical purity (45.35:45.07:9.58 at.%) and microstructure of the deposited films and device were characterized by energy dispersive x-ray analysis, x-ray photoelectron spectroscopy, and scanning electron microscopy. The crystallographic parameters, a = 11.512 b = 4.163and c = 4.452 with orthorhombic crystal structure and monophase nature were analyzed by powder x-ray diffraction. Raman spectroscopy revealed the vibrational modes, and UVVis-NIR spectroscopy was used to study the direct nature of optical absorption with a band gap of 1.14eV. The currentvoltage (I-V) characteristics of the semiconductor diode were measured in room temperature (25C) and revealed rectifying properties and the cut-off voltage for the device, 0.57V. The obtained results highlight that the use of a p-SnSe1-xOx (SSO) layer as an interface between n-CdS/Au diodes exhibits excellent rectifying behavior and enhanced diode performance. Therefore, the p-SSO layer is a suitable material for heterojuction diodes and optoelectronic switches. Graphical Abstract: [Figure not available: see fulltext.]. 2022, The Minerals, Metals &amp; Materials Society. Creator An entity primarily responsible for making the resource John B.; Vardhurajaperumal S. Source A related resource from which the described resource is derived Journal of Electronic Materials, Vol-51, No. 12, pp. 6827-6834. Publisher An entity responsible for making the resource available Springer Date A point or period of time associated with an event in the lifecycle of the resource 2022-01-01 Identifier An unambiguous reference to the resource within a given context <a href="https://doi.org/10.1007/s11664-022-09904-0" target="_blank" rel="noreferrer noopener">https://doi.org/10.1007/s11664-022-09904-0</a> <br /><br /><a href="https://www.scopus.com/inward/record.uri?eid=2-s2.0-85139246768&amp;doi=10.1007%2Fs11664-022-09904-0&amp;partnerID=40&amp;md5=b4b9e6bae866a34b40874b4039b5f137" target="_blank" rel="noreferrer noopener">https://www.scopus.com/inward/record.uri?eid=2-s2.0-85139246768&amp;doi=10.1007%2fs11664-022-09904-0&amp;partnerID=40&amp;md5=b4b9e6bae866a34b40874b4039b5f137</a> Rights Information about rights held in and over the resource Restricted Access Relation A related resource ISSN: 3615235; CODEN: JECMA Format The file format, physical medium, or dimensions of the resource Online Language A language of the resource English Type The nature or genre of the resource Article Coverage The spatial or temporal topic of the resource, the spatial applicability of the resource, or the jurisdiction under which the resource is relevant John B., Department of Physics and Electronics, CHRIST (Deemed to be University), Karnataka, Bangalore, 560029, India; Vardhurajaperumal S., Center for Nanoscience and Engineering (CeNSE), Indian Institute of Science, Bangalore, India