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              <text>Simulation and fabrication of tungsten oxide thin films for electrochromic applications</text>
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              <text>Electrochromism; Nano-pillars; Simulation; Sputtering; Transmittance; Tungsten oxide (WO&lt;sub&gt;3&lt;/sub&gt;)</text>
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              <text>Electrochromics is the emerging technology that is used in sunlight control window glazing for buildings, automobiles and it can also control indoor climate through smart windows. Electrochromism is the mutable change in optical properties of an electrochromic material caused by redox reactions due to the application of voltage. Easy intercalating the H + ions on a dense electrochromic material (WO3) is the most important parameter as far as the reaction kinetics is concerned. The goal of our work is to improve the electrochemical response of electrochromic material by constructing nano-pillars rather than using dense electrochromic materials. Electrochemical performance of both the dense (planar) and porus (nano pillars) structures were simulated and experimentally proved with a systematic discussion in the present work. It is proven and shown here the increase in the electrochemical kinetics through easy diffusion of ions into the nanostructured electrochromic material.  2022 Elsevier B.V.</text>
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              <text>Naveen Kumar K.; Nithya G.; Shaik H.; Hemanth B.; Chethana M.; Kishore K.; Madhavi V.; Jafri R.I.; Sattar S.A.; Gupta J.; Ashok Reddy G.V.</text>
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              <text>Physica B: Condensed Matter, Vol-640</text>
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              <text>Elsevier B.V.</text>
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              <text>&lt;a href="https://doi.org/10.1016/j.physb.2022.413932" target="_blank" rel="noreferrer noopener"&gt;https://doi.org/10.1016/j.physb.2022.413932&lt;/a&gt;
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              <text>ISSN: 9214526; CODEN: PHYBE</text>
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              <text>Naveen Kumar K., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Nithya G., Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Shaik H., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Hemanth B., Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Chethana M., Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Kishore K., Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Madhavi V., Interdisciplinary Centre for Energy Research, Indian Institute of Science, Bengaluru, 560012, India; Jafri R.I., Department of Physics and Electronics, Christ University, Hosur Road, Bengaluru, 560029, India; Sattar S.A., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Gupta J., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Ashok Reddy G.V., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Department of Physics, SJB Institute of Technology, Kengeri, Bengaluru, 560060, India</text>
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