On ion transport during the electrochemical reaction on plane and GLAD deposited WO3 thin films
- Title
- On ion transport during the electrochemical reaction on plane and GLAD deposited WO3 thin films
- Creator
- Naveen Kumar K.; Shaik H.; Chandrashekar L.N.; Aishwarya P.; Abdul Sattar S.; Nithya G.; Madhavi V.; Imran Jafri R.; Gupta J.; Ashok Reddy G.V.
- Description
- Tungsten oxide thin films were deposited on FTO and Corning glass substrates on Plane and GLAD (75) using DC magnetron sputtering and characterized using SEM, XRD, UVVis spectrophotometer, and Electrochemical analyzer systematically. Further, a comparative analysis was carried out in which it was observed that the result of surface morphology for plane showed the denser and GLAD showed nanopillars deposition. The amorphous nature of the sample was evident from XRD analysis. Optical transmittance was between 87% and 81% for both plane and GLAD. The Electrochemical studies showed the diffusion coefficient of H+ ions are more compared to Li+ ions for both plane and GLAD and Coloration efficiency was calculated at the scan rates of 10, 30, and 50 mV/s at the wavelength of 500 to 600 nm. 2021
- Source
- Materials Today: Proceedings, Vol-59, pp. 275-282.
- Date
- 2022-01-01
- Publisher
- Elsevier Ltd
- Subject
- Coloration efficiency; Diffusion coefficient; GLAD; Plane; Sputtering; Tungsten Oxide (WO3)
- Coverage
- Naveen Kumar K., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Shaik H., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Chandrashekar L.N., Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Aishwarya P., Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Abdul Sattar S., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Nithya G., Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Madhavi V., Interdisciplinary Centre for Energy Research, Indian Institute of Science, Bengaluru, 560012, India; Imran Jafri R., Department of Physics and Electronics, Christ University, Hosur Road, Bengaluru, 560029, India; Gupta J., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Ashok Reddy G.V., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Department of Physics, SJB Institute of Technology, Kengeri, Bengaluru, 560060, India
- Rights
- Restricted Access
- Relation
- ISSN: 22147853
- Format
- Online
- Language
- English
- Type
- Article
Collection
Citation
Naveen Kumar K.; Shaik H.; Chandrashekar L.N.; Aishwarya P.; Abdul Sattar S.; Nithya G.; Madhavi V.; Imran Jafri R.; Gupta J.; Ashok Reddy G.V., “On ion transport during the electrochemical reaction on plane and GLAD deposited WO3 thin films,” CHRIST (Deemed To Be University) Institutional Repository, accessed February 25, 2025, https://archives.christuniversity.in/items/show/15388.