Effect of annealing and oxygen partial pressure on the RF sputtered WO3 thin films for electrochromic applications
Annealing; Partial pressures; RF magnetron sputtering; Transmittance; Tungsten oxide (WO3)
the electrochromic thin layer of Tungsten trioxide (WO3) was RF sputtered on FTO (fluorine-doped tin oxide) slide. In a reactive Ar + O2 gas environment with varying oxygen partial pressures, the deposition continued. The samples were air annealed at 400 C for 2 h after being deposited at room temperature. SEM, XRD, UVVisible spectrometer, and electrochemical analyzer characterization methods were employed to analyze the surface, structural morphology, optical, and electrochromic behaviour of the deposited material after annealing. The Optical Bandgap and Transmittance were found to be of a higher value for air annealed samples than RT deposited samples because RT deposited samples are amorphous whereas air annealed samples exhibit crystalline nature with Oxidation, reduction peak currents variation with respect to the temperature. 2021
Naveen Kumar K.; Shaik H.; Pawar A.; Chandrashekar L.N.; Sattar S.A.; Nithya G.; Imran Jafri R.; Madhavi V.; Gupta J.; Ashok Reddy G.V.
Materials Today: Proceedings, Vol-59, pp. 339-344.
https://doi.org/10.1016/j.matpr.2021.11.185 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85122641951&doi=10.1016%2fj.matpr.2021.11.185&partnerID=40&md5=989dda4b46dfa7ad8be2903908b83126
Naveen Kumar K., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Shaik H., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Pawar A., Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Chandrashekar L.N., Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Sattar S.A., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Nithya G., Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Centre for Nano-materials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Imran Jafri R., Department of Physics and Electronics, Christ University, Hosur Road, Bengaluru, 560029, India; Madhavi V., Interdisciplinary Centre for Energy Research, Indian Institute of Science, Bengaluru, 560012, India; Gupta J., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Ashok Reddy G.V., Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Department of Physics, SJB Institute of Technology, Kengeri, Bengaluru, 560060, India