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              <text>High-performance reconfigurable FET for a simple variable gain buffer amplifier design</text>
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              <text>buffer amplifier; CSDA; OTA; SG-RFET; strained silicon</text>
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              <text>Design and simulation of variable gain analog buffer amplifier using single gate reconfigurable field-effect transistor (SG-RFET) with strained silicon channel are proposed. The design simplicity makes SG-RFET device a potential candidate compared to the multi-gate RFET devices. The gain of the proposed configuration is varied by tuning the feedback voltage. The voltage gain of the proposed configuration can be tuned from 0.97V/V to 5V/V with an output load of 1 k?. The operational transconductance amplifier (OTA) using the SG-RFET device is used in the proposed buffer amplifier design.  2021 Informa UK Limited, trading as Taylor &amp;amp; Francis Group.</text>
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              <text>Jayachandran R.; Komaragiri R.S.; P C S.; R R.</text>
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              <text>International Journal of Electronics, Vol-109, No. 1, pp. 100-118.</text>
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              <text>Taylor and Francis Ltd.</text>
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              <text>2022-01-01</text>
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              <text>&lt;a href="https://doi.org/10.1080/00207217.2021.1908618" target="_blank" rel="noreferrer noopener"&gt;https://doi.org/10.1080/00207217.2021.1908618&lt;/a&gt;
&lt;br /&gt;&lt;br /&gt;&lt;a href="https://www.scopus.com/inward/record.uri?eid=2-s2.0-85104233996&amp;amp;doi=10.1080%2F00207217.2021.1908618&amp;amp;partnerID=40&amp;amp;md5=a675ebe2d604b0c79634624c3d7ebfac" target="_blank" rel="noreferrer noopener"&gt;https://www.scopus.com/inward/record.uri?eid=2-s2.0-85104233996&amp;amp;doi=10.1080%2f00207217.2021.1908618&amp;amp;partnerID=40&amp;amp;md5=a675ebe2d604b0c79634624c3d7ebfac&lt;/a&gt;</text>
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              <text>ISSN: 207217; CODEN: IJELA</text>
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              <text>Online</text>
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              <text>English</text>
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              <text>Jayachandran R., Department of Electronics and Communication, National Institute of Technology Calicut, Kerala, Kozhikode, India, Department of Electronics and Communication, The National Institute of Engineering, Karnataka, Mysore, India; Komaragiri R.S., Department of Electronics and Communication, Bennett University, Greater Noida, India; P C S., Department of Electronics and Communication, National Institute of Technology Calicut, Kerala, Kozhikode, India; R R., Department of Electronics and Communication Engineering, School of Engineering and Technology, CHRIST (Deemed to be University}, Bangalore, India</text>
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