Investigation of photoluminescence emission from ?-Ga2O3: Ce thin films deposited by spray pyrolysis technique
Amorphous materials; Dexter theory; Optical materials; Phosphors; Quenching; Thin films
Ce doped Ga2O3 thin films for different doping concentrations (3 at%, 4 at%, 5 at%, 6 at%, 7 at%, and 8 at%) were deposited by spray pyrolysis method. X-ray diffraction analysis confirmed the crystalline structure as that of monoclinic ?-Ga2O3. The effect of doping on the band gap of the material was studied by UV-Visible spectroscopic method and the thickness of the film and refractive index were measured by ellipsometric technique. The photoluminescence excitation and emission spectra were recorded for pure and doped samples and the energy band scheme with possible radiative and nonradiative transitions were elucidated. Concentration quenching effect was observed, and the underlying mechanism responsible for quenching effect was studied based on Dexter theory. 2021 Elsevier B.V.
Journal of Alloys and Compounds, Vol-872
https://doi.org/10.1016/j.jallcom.2021.159590 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85103733362&doi=10.1016%2fj.jallcom.2021.159590&partnerID=40&md5=613509ba5582f2aa9cd69e4ca193be74
Raphael R., Optoelectronic and Nanomaterials Research Laboratory, Department of Physics, Union Christian College, Aluva, 683102, Kerala, India; Anila E.I., Optoelectronic and Nanomaterials Research Laboratory, Department of Physics, Union Christian College, Aluva, 683102, Kerala, India, Christ (Deemed to be University), Bengaluru, 560029, Karnataka, India