Dublin Core The Dublin Core metadata element set is common to all Omeka records, including items, files, and collections. For more information see, http://dublincore.org/documents/dces/. Title A name given to the resource Articles Article Faculty Publications -Articles Dublin Core The Dublin Core metadata element set is common to all Omeka records, including items, files, and collections. For more information see, http://dublincore.org/documents/dces/. Title A name given to the resource An analytical model for a TFET with an n-doped channel operating in accumulation and inversion modes Subject The topic of the resource Analytical model; Band-to-band tunneling (BTBT); Poissons equation; Simulations; Technology computer-aided design (TCAD); Tunnel field-effect transistor (TFET) Description An account of the resource The tunnel field-effect transistor (TFET) is an ambipolar device that conducts current with the channel in both accumulation and inversion modes. Analytical expressions for the channel potential and current in a TFET with an n-doped channel when operating in the accumulation and inversion modes are proposed herein. The potential model is derived by solving the two-dimensional (2D) Poisson equation using the superposition principle while considering the charges present in the channel due to electron or hole accumulation along with the depletion charges. An expression for the tunneling current corresponding to the maximum tunneling probability is also derived. The tunneling current is obtained by analytically calculating the minimum tunneling length in a TFET when operating in the accumulation or inversion mode. The results of the proposed potential model is compared with technology computer-aided design (TCAD) simulations for TFET with various dimensions, revealing good agreement. The potential and current in an n-type TFET (nTFET) obtained using the proposed models are also analyzed. 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature. Creator An entity primarily responsible for making the resource Ranjith R.; Suja K.J.; Komaragiri R.S. Source A related resource from which the described resource is derived Journal of Computational Electronics, Vol-20, No. 3, pp. 1125-1136. Publisher An entity responsible for making the resource available Springer Date A point or period of time associated with an event in the lifecycle of the resource 2021-01-01 Identifier An unambiguous reference to the resource within a given context <a href="https://doi.org/10.1007/s10825-021-01683-x" target="_blank" rel="noreferrer noopener">https://doi.org/10.1007/s10825-021-01683-x</a> <br /><br /><a href="https://www.scopus.com/inward/record.uri?eid=2-s2.0-85104732940&amp;doi=10.1007%2Fs10825-021-01683-x&amp;partnerID=40&amp;md5=46a0626aa0cff684bec82dde18f310f7" target="_blank" rel="noreferrer noopener">https://www.scopus.com/inward/record.uri?eid=2-s2.0-85104732940&amp;doi=10.1007%2fs10825-021-01683-x&amp;partnerID=40&amp;md5=46a0626aa0cff684bec82dde18f310f7</a> Rights Information about rights held in and over the resource Restricted Access Relation A related resource ISSN: 15698025 Format The file format, physical medium, or dimensions of the resource Online Language A language of the resource English Type The nature or genre of the resource Article Coverage The spatial or temporal topic of the resource, the spatial applicability of the resource, or the jurisdiction under which the resource is relevant Ranjith R., Department of Electronics and Communication Engineering, School of Engineering and Technology, CHRIST (Deemed to be University), Bengaluru, India; Suja K.J., Department of Electronics and Communication Engineering, National Institute of Technology Calicut, Kozhikode, India; Komaragiri R.S., Department of Electronics and Communication Engineering, Bennett University, Greater Noida, India