P type copper doped tin oxide thin films and p-n homojunction diodes based on them

Title

P type copper doped tin oxide thin films and p-n homojunction diodes based on them

Creator

Eqbal E.; Anila E.I.

Description

P-type copper doped tin oxide (SnO2:Cu) thin films were prepared by chemical spray pyrolysis method on glass substrates for different doping concentrations. Their structural, optical, surface morphological, elemental and electrical studies were investigated. We fabricated two transparent homojunction diodes using optimized sample of SnO2:Cu which are p- SnO2:Cu/n-SnO2 and p-SnO2:Cu/n- SnO2:F.These diodes are reported for the first time by this method. 2021 Elsevier B.V.

Source

Optical Materials, Vol-118

Date

2021-01-01

Publisher

Elsevier B.V.

Subject

B M effect; Band gap narrowing; Orthorhombic; p-n junction; Spray pyrolysis

Coverage

Eqbal E., Optoelectronic and Nanomaterials' Research Laboratory, Department of Physics, Union Christian College, Aluva, 683102, Kerala, India, Department of Basic Sciences and Humanities, KMEA Engineering College, Aluva, 683561, India; Anila E.I., Optoelectronic and Nanomaterials' Research Laboratory, Department of Physics, Union Christian College, Aluva, 683102, Kerala, India, Department of Physics and Electronics CHRIST (Deemed to be University), Bengaluru, 560029, India

Rights

Restricted Access

Relation

ISSN: 9253467; CODEN: OMATE

Format

Online

Language

English

Type

Article

Identifier

https://doi.org/10.1016/j.optmat.2021.111281

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