Dublin Core The Dublin Core metadata element set is common to all Omeka records, including items, files, and collections. For more information see, http://dublincore.org/documents/dces/. Title A name given to the resource Articles Article Faculty Publications -Articles Dublin Core The Dublin Core metadata element set is common to all Omeka records, including items, files, and collections. For more information see, http://dublincore.org/documents/dces/. Title A name given to the resource Ge-GaAs-Ge Heterojunction MOSFETs for Mixed-Signal Applications Subject The topic of the resource Band-to-band tunneling (BBT); intraband tunneling; static random access memory (SRAM); thermionic emission Description An account of the resource A lattice matched heterojunction intraband tunnel (HJIBT) FET is proposed. The performance dependence of the device on conduction band (CB) discontinuity at source-channel and drain-channel interface is addressed using numerical simulation. Various mechanisms governing transport phenomena in the HJIBT FET are investigated in detail for different CB offsets (CBOs). For low gate to source voltage ( ${V}_{\text {GS}}$ ), thermionic emission is found to be the most significant transport mechanism. For moderate ${V}_{\text {GS}}$ , intraband tunneling phenomenon dominates over thermionic emission and continues to remain so. At high ${V}_{\text {GS}}$ , band-to-band tunneling occurs in HJIBT FETs. The proposed device shows improved figures of merit such as drain-induced barrier lowering (DIBL), ON-current ( ${I}_{ \mathrm{\scriptscriptstyle ON}}$ ) to OFF-current ( ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) ratio ( ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ), subthreshold slope (SS), gate capacitance ( ${C}_{\text {G}}$ ), ${g}_{m}$ (transconductance), and ${f}_{T}$ (cut-off frequency), with respect to conventional MOSFET. Also, the design of a high-performance hybrid 6T-static random access memory (SRAM) is proposed. 1963-2012 IEEE. Creator An entity primarily responsible for making the resource Mech B.C.; Koley K.; Kumar J. Source A related resource from which the described resource is derived IEEE Transactions on Electron Devices, Vol-67, No. 9, pp. 3585-3591. Publisher An entity responsible for making the resource available Institute of Electrical and Electronics Engineers Inc. Date A point or period of time associated with an event in the lifecycle of the resource 2020-01-01 Identifier An unambiguous reference to the resource within a given context <a href="https://doi.org/10.1109/TED.2020.3006821" target="_blank" rel="noreferrer noopener">https://doi.org/10.1109/TED.2020.3006821</a> <br /><br /><a href="https://www.scopus.com/inward/record.uri?eid=2-s2.0-85090778126&amp;doi=10.1109%2FTED.2020.3006821&amp;partnerID=40&amp;md5=cbb7a01bd2020cba81dc4e586d779f7a" target="_blank" rel="noreferrer noopener">https://www.scopus.com/inward/record.uri?eid=2-s2.0-85090778126&amp;doi=10.1109%2fTED.2020.3006821&amp;partnerID=40&amp;md5=cbb7a01bd2020cba81dc4e586d779f7a</a> Rights Information about rights held in and over the resource Restricted Access Relation A related resource ISSN: 189383; CODEN: IETDA Format The file format, physical medium, or dimensions of the resource Online Language A language of the resource English Type The nature or genre of the resource Article Coverage The spatial or temporal topic of the resource, the spatial applicability of the resource, or the jurisdiction under which the resource is relevant Mech B.C., Department of Electronics and Communication Engineering, Christ (Deemed to Be University), Bengaluru, India; Koley K., Department of Electronics Engineering, Indian Institute of Technology Dhanbad, Dhanbad, India; Kumar J., Department of Electronics Engineering, Indian Institute of Technology Dhanbad, Dhanbad, India