Dublin Core The Dublin Core metadata element set is common to all Omeka records, including items, files, and collections. For more information see, http://dublincore.org/documents/dces/. Title A name given to the resource Articles Article Faculty Publications -Articles Dublin Core The Dublin Core metadata element set is common to all Omeka records, including items, files, and collections. For more information see, http://dublincore.org/documents/dces/. Title A name given to the resource Vacuum annealed tin sulfide (SnS) thin films for solar cell applications Subject The topic of the resource Absorption coefficient; AFM; Annealing; Thermal evaporation; Thin films; Tin sulfide Description An account of the resource Thin films of tin sulfide (SnS) were grown on a glass substrate at an optimum temperature of 300 C by thermal evaporation technique. Following the deposition, films were vacuum annealed at different temperatures in the range of 100 to 300 C for 2 h. The effect of annealing temperature (Ta) on the composition, surface morphology, microstructure, optical and electrical properties was investigated. Elemental analysis showed sulfur deficiency of annealed films and the Sn to S atomic percent ratio increased from 1.0 to 1.1. XRD analysis confirmed the orthorhombic crystal structure of the films with (111) preferred orientation and phase purity. Degree of preferred orientation decreased with increase in Ta and the diffraction peaks corresponding to other planes intensified. Increasing the Ta to 300 C led to an increase in crystallite size to 129 nm. Results indicated presence of several crystallites in the grains of as-deposited films. AFM studies revealed the fragmentation of larger grain and the average grain size reduced form 265 nm for as-deposited films to 132.8 nm for the film annealed at 300 C. An apparent shift in absorption edge towards longer wavelengths is observed for films annealed at Ta &gt; 200 C. The optical constant such as optical band gap, extinction coefficient (k), absorption coefficient (?) and refractive index (n) have been evaluated. The optical band gap of SnS thin films varied marginally with the annealing temperature and remained in between 1.331.29 eV. The extinction coefficient of the film annealed at 300 C was enhanced and is found to be 0.85 at 700 nm. At the annealing temperature of 300 C, the SnS films had enhanced electrical properties: the electrical resistivity was 7.8 ? cm, the p-type carrier concentration was up to 2.17 1016 cm?3, and the mobility was about 36.9 cm2V?1s?1. The variation of physical parameters with Ta has been explained by taking into account the crystallite size and the presented values are discussed with relevance to solar cells. 2017 Elsevier B.V. Creator An entity primarily responsible for making the resource Hegde S.S.; Kunjomana A.G.; Murahari P.; Prasad B.K.; Ramesh K. Source A related resource from which the described resource is derived Surfaces and Interfaces, Vol-10, pp. 78-84. Publisher An entity responsible for making the resource available Elsevier B.V. Date A point or period of time associated with an event in the lifecycle of the resource 2018-01-01 Identifier An unambiguous reference to the resource within a given context <a href="https://doi.org/10.1016/j.surfin.2017.12.003" target="_blank" rel="noreferrer noopener">https://doi.org/10.1016/j.surfin.2017.12.003</a> <br /><br /><a href="https://www.scopus.com/inward/record.uri?eid=2-s2.0-85038255000&amp;doi=10.1016%2Fj.surfin.2017.12.003&amp;partnerID=40&amp;md5=8d2e411d3668cff264b57389bdb55d02" target="_blank" rel="noreferrer noopener">https://www.scopus.com/inward/record.uri?eid=2-s2.0-85038255000&amp;doi=10.1016%2fj.surfin.2017.12.003&amp;partnerID=40&amp;md5=8d2e411d3668cff264b57389bdb55d02</a> Rights Information about rights held in and over the resource Restricted Access Relation A related resource ISSN: 24680230 Format The file format, physical medium, or dimensions of the resource Online Language A language of the resource English Type The nature or genre of the resource Article Coverage The spatial or temporal topic of the resource, the spatial applicability of the resource, or the jurisdiction under which the resource is relevant Hegde S.S., Department of Physics, CMR Institute of Technology, Bangalore, 560037, India; Kunjomana A.G., Department of Physics, Christ University, Bangalore, 560029, India; Murahari P., Department of Physics, Indian Institute of Science, Bangalore, 560012, India, School of Physics and Astronomy, Queen Mary University of London, Mile End, London, E1 4NS, United Kingdom; Prasad B.K., Department of Physics, CMR Institute of Technology, Bangalore, 560037, India; Ramesh K., Department of Physics, Indian Institute of Science, Bangalore, 560012, India