Dublin Core The Dublin Core metadata element set is common to all Omeka records, including items, files, and collections. For more information see, http://dublincore.org/documents/dces/. Title A name given to the resource Articles Article Faculty Publications -Articles Dublin Core The Dublin Core metadata element set is common to all Omeka records, including items, files, and collections. For more information see, http://dublincore.org/documents/dces/. Title A name given to the resource Crystal shape engineering and studies on the performance of vapour deposited InSe platelets Description An account of the resource The influence of growth conditions on the morphology of stoichiometric indium monoselenide (InSe) crystals has been explored. Crystalline habits such as microfibres, needles, platelets and spherulites were obtained from physical vapour deposition by optimizing supersaturation, which sturdily depends on the temperature difference between charge (TC) and substrate (TS) zones ?T, (= TC ? TS). Morphology and growth mechanism were investigated with the aid of scanning electron microscopy and high-resolution transmission electron microscopy, which justified the layer by layer addition of atoms as per the KosselStranskiVolmer model. Thermogravimetric measurements revealed the stability of InSe, confirming its melting point, M.P. = 611C, which reflects the formation of monophase. The mobility and carrier concentration calculated from the Hall effect experiment are found to be 11.14cm2V?1s?1 and 1.52 1020cm?3 respectively. Furthermore, optical characterizations such as UVVisNIR and photoluminescence spectrometric analysis established the value of band gap as 1.45eV, manifesting the versatility of the grown semiconducting platelets for photovoltaic applications. 2018, Springer Science+Business Media, LLC, part of Springer Nature. Creator An entity primarily responsible for making the resource Teena M.; Kunjomana A.G. Source A related resource from which the described resource is derived Journal of Materials Science: Materials in Electronics, Vol-29, No. 7, pp. 5536-5547. Publisher An entity responsible for making the resource available Springer New York LLC Date A point or period of time associated with an event in the lifecycle of the resource 2018-01-01 Identifier An unambiguous reference to the resource within a given context <a href="https://doi.org/10.1007/s10854-018-8522-5" target="_blank" rel="noreferrer noopener">https://doi.org/10.1007/s10854-018-8522-5</a> <br /><br /><a href="https://www.scopus.com/inward/record.uri?eid=2-s2.0-85040643473&amp;doi=10.1007%2Fs10854-018-8522-5&amp;partnerID=40&amp;md5=8da75cadcfffd37d2e9082c4ce624ea9" target="_blank" rel="noreferrer noopener">https://www.scopus.com/inward/record.uri?eid=2-s2.0-85040643473&amp;doi=10.1007%2fs10854-018-8522-5&amp;partnerID=40&amp;md5=8da75cadcfffd37d2e9082c4ce624ea9</a> Rights Information about rights held in and over the resource Restricted Access Relation A related resource ISSN: 9574522 Format The file format, physical medium, or dimensions of the resource Online Language A language of the resource English Type The nature or genre of the resource Article Coverage The spatial or temporal topic of the resource, the spatial applicability of the resource, or the jurisdiction under which the resource is relevant Teena M., Research and Development Centre, Bharathiar University, Coimbatore, 641 046, Tamil Nadu, India; Kunjomana A.G., Department of Physics, Christ University, Bangalore, 560 029, Karnataka, India