Architecture of monophase InSe thin film structures for solar cell applications
Annealing; Electrical properties; Optical properties; Substrate temperature; Surface properties; Thin films
Control of microstructural evolution during the crystallization of InSe thin films is an inevitable strategy to mold their fundamental properties and potential for the fabrication of solar cells. Impact of annealing as well as substrate temperature on the crystallization progress and physical characteristics of thermally evaporated InSe was examined systematically, which eventually dictates the overall performance of resulting device. Structural and compositional characterizations have been thoroughly investigated by X-ray diffraction and energy dispersive X-ray analyses. InSe films form hexagonal structure with a preferred orientation of crystallites along the (004) direction upon crystallization. The layer of InSe is formed by two concomitant processes, deposition and recrystallization. Application of heat treatment resulted in topographical modification, which was probed by an atomic force microscope. Surface roughness was enhanced due to the influence of temperature and thereby the growth of grains. Investigations of electrical and optical properties, thus provided ample evidence for the use of crystallized monophase InSe as an absorber layer in photovoltaic conversion devices. Carrier concentration and mobility of charge carriers estimated from the Hall measurements were found to be 19.43020cm?3 and 2.01cm2V?1s?1 respectively. Moreover, this research work explores power conversion efficiency of p-InSe/n-CdS heterojunction solar cells. 2017 Elsevier B.V.
Teena M.; Kunjomana A.G.; Ramesh K.; Venkatesh R.; Naresh N.
Solar Energy Materials and Solar Cells, Vol-166, pp. 190-196.
https://doi.org/10.1016/j.solmat.2017.03.027 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85016278894&doi=10.1016%2fj.solmat.2017.03.027&partnerID=40&md5=6aa156bb171d9806f684f2e01235a20c
Teena M., Department of Physics, Christ University, Bengaluru, 560029, India, Research and Development Centre, Bharathiar University, Coimbatore, 641046, India; Kunjomana A.G., Department of Physics, Christ University, Bengaluru, 560029, India; Ramesh K., Department of Physics, Indian Institute of Science, Bengaluru, 560012, India; Venkatesh R., Department of Physics, Indian Institute of Science, Bengaluru, 560012, India; Naresh N., Department of Physics, Indian Institute of Science, Bengaluru, 560012, India