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          <name>Title</name>
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              <text>Influence of Te doping on the dielectric and optical properties of InBi crystals grown by directional freezing</text>
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              <text>Crystals; Dielectric properties; Doping; Indium bismuthide; Optical properties; Phase transitions; Tellurium</text>
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              <text>Stoichiometric pure and tellurium (Te) doped indium bismuthide (InBi) were grown using the directional freezing technique in a fabricated furnace. The X-ray diffraction profiles identified the crystallinity and phase composition. The surface topographical features were observed by scanning electron microscopy and atomic force microscopy. The energy dispersive analysis by X-rays was performed to identify the atomic proportion of elements. Studies on the temperature dependence of dielectric constant (?), loss tangent (tan?), and AC conductivity (?ac) reveal the existence of a ferroelectric phase transition in the doped material at 403 K. When InBi is doped with tellurium (4.04 at%), a band gap of 0.20 eV can be achieved, and this is confirmed using Fourier transform infrared studies. The results thus show the conversion of semimetallic InBi to a semiconductor with the optical properties suitable for use in infrared detectors.  2014 University of Science and Technology Beijing and Springer-Verlag Berlin Heidelberg.</text>
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              <text>Kumar C.J.A.; Kunjomana A.G.</text>
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              <text>International Journal of Minerals, Metallurgy and Materials, Vol-21, No. 5, pp. 503-509.</text>
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              <text>University of Science and Technology Beijing</text>
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              <text>2014-01-01</text>
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              <text>&lt;a href="https://doi.org/10.1007/s12613-014-0935-4" target="_blank" rel="noreferrer noopener"&gt;https://doi.org/10.1007/s12613-014-0935-4&lt;/a&gt;
&lt;br /&gt;&lt;br /&gt;&lt;a href="https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905826360&amp;amp;doi=10.1007%2Fs12613-014-0935-4&amp;amp;partnerID=40&amp;amp;md5=d2cf52f4e1ec4a6f2d5f31799975ec9d" target="_blank" rel="noreferrer noopener"&gt;https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905826360&amp;amp;doi=10.1007%2fs12613-014-0935-4&amp;amp;partnerID=40&amp;amp;md5=d2cf52f4e1ec4a6f2d5f31799975ec9d&lt;/a&gt;</text>
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              <text>Restricted Access</text>
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              <text>ISSN: 16744799</text>
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              <text>Online</text>
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              <text>Kumar C.J.A., Crystal Research Centre, Department of Physics, Christ University, Bangalore 560 029, India; Kunjomana A.G., Crystal Research Centre, Department of Physics, Christ University, Bangalore 560 029, India</text>
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