Enhancement of thermoelectric efficiency in vapor deposited Sb 2Te3 and Sb1.8In0.2Te3 crystals

Title

Enhancement of thermoelectric efficiency in vapor deposited Sb 2Te3 and Sb1.8In0.2Te3 crystals

Creator

Thankamma G.; Kunjomana A.G.

Description

Pure and indium doped antimony telluride (Sb2Te3) crystals find applications in high performance room temperature thermoelectric devices. Owing to the meagre physical properties exhibited on the cleavage faces of melt grown samples, an attempt was made to explore the thermoelectric parameters of p-type crystals grown by the physical vapor deposition (PVD) method. The crystal structure of the grown platelets (9 mm8 mm2 mm) was identified as rhombohedral by x-ray powder diffraction method. The energy dispersive analysis confirmed the elemental composition of the crystals. The electron microscopic and scanning probe image studies revealed that the crystals were grown by layer growth mechanism with low surface roughness. At room temperature (300 K), the values of Seebeck coefficient S (c) and power factor were observed to be higher for Sb1.8In0.2Te 3 crystals (155 ?VK-1, 2.669 10-3 W/mK2) than those of pure ones. Upon doping, the thermal conductivity ? (c) was decreased by 37.14% and thus thermoelectric efficiency was improved. The increased figure of merit, Z = 1.23 10-3 K -1 for vapour grown Sb1.8In0.2Te3 platelets indicates that it could be used as a potential thermoelectric candidate. Pure and indium doped antimony telluride (Sb2Te 3) crystals were grown by the physical vapor deposition (PVD) method. Incorporation of indium atoms into the antimony sub lattice improved Seebeck coefficient and reduced thermal conductivity. The increased figure of merit, Z = 1.23 10-3K-1 for vapor grown Sb 1.8In0.2Te3 platelets indicates that it could be used as a potential thermoelectric candidate. 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Source

Crystal Research and Technology, Vol-49, No. 4, pp. 212-219.

Date

2014-01-01

Subject

defects; doping; figure of merit; physical vapor deposition

Coverage

Thankamma G., Department of Physics, Christ University, Bangalore 560 029, Karnataka, India; Kunjomana A.G., Department of Physics, Christ University, Bangalore 560 029, Karnataka, India

Rights

Restricted Access

Relation

ISSN: 15214079; CODEN: CRTED

Format

Online

Language

English

Type

Article

Identifier

https://doi.org/10.1002/crat.201300318

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