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                <text>Conference Papers</text>
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    <name>Conference Paper</name>
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          <name>Title</name>
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              <text>Growth Of ZnSnN2 Semiconductor Films For Gas Sensor Applications</text>
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              <text>ZnSnN2 is a member of class of nitride semiconductors which have the additional benefits of earth abundance and non-toxicity. For device applications, NH3 gas detecting senor, which finds use in chemical, pharmaceutical, and food process industries, are fabricated with zinc-tin-nitride (ZnSnN2) thin-films on glass substrate by making use of metal as contacts. The ZnSnN2 sensor is found extremely selective to ammonia (NH3) amongst other gases like ethanol, NO2, H2S and exhibited good detecting responses at room temperature. There are many ways to develop thin films of ZnSnN2, and hence in this work we are trying to find a cost effective, feasible and easier method of synthesis, i.e., chemical vapor deposition method. The first step was the optimization of process parameters to grow Zinc-Tin (ZnSn) thin-films. Later, optimization of the process parameters for the growth of compound ZnSnN2 was completed. The grown films are characterized by material quality using X-Ray Diffraction and UV- Vis spectroscopy.  2022 American Institute of Physics Inc.. All rights reserved.</text>
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          <name>Creator</name>
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              <text>Pawar A.S.; Shaik H.; Naina R.K.; Naveen Kumar K.; Aishwarya P.; Imran Jafri R.</text>
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              <text>AIP Conference Proceedings, Vol-2615</text>
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              <text>American Institute of Physics Inc.</text>
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          <name>Date</name>
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              <text>2022-01-01</text>
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              <text>&lt;a href="https://doi.org/10.1063/5.0120097" target="_blank" rel="noreferrer noopener"&gt;https://doi.org/10.1063/5.0120097&lt;/a&gt;
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          <name>Rights</name>
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              <text>Restricted Access</text>
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              <text>ISSN: 0094243X; ISBN: 978-073544232-0</text>
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              <text>Online</text>
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              <text>English</text>
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              <text>Pawar A.S., Center for Nanomaterials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Department of ECE, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Shaik H., Center for Nanomaterials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Naina R.K., Department of ECE, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Naveen Kumar K., Center for Nanomaterials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Department of Physics, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Aishwarya P., Center for Nanomaterials and MEMS, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India, Department of ECE, Nitte Meenakshi Institute of Technology, Yelahanka, Bengaluru, 560064, India; Imran Jafri R., Department of Physics and Electronics, Christ University, Hosur Road, Bengaluru, 560029, India</text>
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