Performance Improvement in E-Gun Deposited SiOx- Based RRAM Device by Switching Material Thickness Reduction

Title

Performance Improvement in E-Gun Deposited SiOx- Based RRAM Device by Switching Material Thickness Reduction

Creator

Roy S.; Maikap S.

Description

A performance improvement by reduction in switching material thickness in a e-gun deposited SiOx based resistive switching memory device was investigated. Reduction in thickness cause thinner filamentary path formation during ON-state by controlling the vacancydefects. Thinner filament cause lowering of operation current from 500 ?A to 100 ?A and also improves the reset current (from >400 ?A to <100 ?A). Switching material thickness reductionalso cause the forming free ability in the device. All these electrical parametric improvements enhance the device reliability performances. The device show >200 dc endurance, >3-hour dataretention and >1000 P/E endurance with 100 ns pulses. 2022 Institute of Physics Publishing. All rights reserved.

Source

Journal of Physics: Conference Series, Vol-2161, No. 1

Date

2022-01-01

Publisher

IOP Publishing Ltd

Subject

E-gun deposition; NVM; RRAM; SiOx

Coverage

Roy S., Electronics Engineering Department, School of Engineering and Technology, Kengeri Campus, CHRIST (Deemed to be) University, Mysore Road Kumbalgodu, Kanmanike, Karnataka, Bengaluru, 560074, India, School of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Taoyuuan, Guishan, 333, Taiwan; Maikap S., School of Electronics Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Taoyuuan, Guishan, 333, Taiwan

Rights

All Open Access; Gold Open Access

Relation

ISSN: 17426588

Format

Online

Language

English

Type

Conference paper

Identifier

https://doi.org/10.1088/1742-6596/2161/1/012040

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