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              <text>Effect of Doping in Aluminium Nitride (AlN) Nanomaterials: A Review</text>
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              <text>Piezoelectric materials can generate electrical charges when subjected to mechanical pressure through the piezoelectric effect. In addition to generating electricity from environmental vibrations, they are also used as nano energy generators for micro electro mechanical systems (MEMS). Aluminum Nitride (AlN) with a doping element exhibits unique physical and chemical properties. It is used to manufacture many electromechanical devices. They are ideal candidates for many applications, including MEMS resonators and microwave filters, due to their large piezoelectric coefficient and low resistance. A number of material properties led to its selection, including high thermal conductivity, good mechanical strength, high resistance, corrosion resistance, and the largest piezoelectric coefficient. A piezoelectric coefficient d33 characterizes the piezoelectric response of AlN thin films. By doping this material, a wide range of applications have been explored.  The Electrochemical Society</text>
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              <text>SnehaThomas E.; Ranjith R.</text>
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              <text>ECS Transactions, Vol-107, No. 1, pp. 15229-15237.</text>
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              <text>Institute of Physics</text>
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              <text>&lt;a href="https://doi.org/10.1149/10701.15229ecst" target="_blank" rel="noreferrer noopener"&gt;https://doi.org/10.1149/10701.15229ecst&lt;/a&gt;
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              <text>ISSN: 19386737; ISBN: 978-160768539-5</text>
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              <text>SnehaThomas E., Department of Electronics and Communication Engineering, CHRIST (Deemed to be University), Bengaluru, India, Department of Applied Electronics and Instrumentation Engineering, Mount Zion College of Engineering, Kadammanitta, Kerala, India; Ranjith R., Department of Electronics and Communication Engineering, CHRIST (Deemed to be University), Bengaluru, India</text>
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