Phonon limited diffusion thermopower in phosphorene
- Title
- Phonon limited diffusion thermopower in phosphorene
- Creator
- Vaidya R.G.; Sankeshwar N.S.; Mulimani B.G.
- Description
- A theoretical investigation of diffusion thermopower, Sd, of phosphorene employing Boltzmann transport formalism is presented. We assume carriers in phosphorene to be scattered by in-plane single and flexural two-phonon processes via deformation potential coupling. Our calculations of Sd in phosphorene show that, at low temperatures (T?< 20 K) Sd increases linearly with temperature and for the range of temperatures considered single phonon contribution to Sd dominates. As function of carrier concentration, ns, considered (1016?1018 m-2), at T = 300K, Sd decreases from 189?V/K to 9.9 ?V/K. 2017 Author(s).
- Source
- AIP Conference Proceedings, Vol-1832
- Date
- 2017-01-01
- Publisher
- American Institute of Physics Inc.
- Subject
- Diffusion Thermopower; Phosphorene
- Coverage
- Vaidya R.G., Department of Physics and C.E.I.E, Tumkur University, Tumkur, Karnataka, 573 102, India; Sankeshwar N.S., Department of Physics, Christ University, Bangalore, Karnataka, 560029, India; Mulimani B.G., BLDE University, Bijapur, Karnataka, 586103, India
- Rights
- Restricted Access
- Relation
- ISSN: 0094243X; ISBN: 978-073541500-3
- Format
- Online
- Language
- English
- Type
- Conference paper
Collection
Citation
Vaidya R.G.; Sankeshwar N.S.; Mulimani B.G., “Phonon limited diffusion thermopower in phosphorene,” CHRIST (Deemed To Be University) Institutional Repository, accessed February 24, 2025, https://archives.christuniversity.in/items/show/20924.