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              <text>Seema; Radhakrishnan, G.V.; Saeed, Abdulkafi Mohammed; Banerjee, Dyuti; Hundekari, Sheela; Chaudhary, Anjali</text>
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              <text>Mathematical modelling and mechanics of acoustic waves in piezoelectric layers between n-type semiconductor plates: an irreducible Cardano method coupled with a functional iteration scheme</text>
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              <text>01-01-2026</text>
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              <text>Acta Mechanica;</text>
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              <text>&lt;a href="https://doi.org/10.1007/s00707-026-04650-4" target="_blank" rel="noreferrer noopener"&gt;https://doi.org/10.1007/s00707-026-04650-4&lt;/a&gt; &lt;br /&gt;&lt;br /&gt;&lt;a href="https://www.scopus.com/pages/publications/105030587481?origin=resultslist" target="_blank" rel="noreferrer noopener"&gt;https://www.scopus.com/pages/publications/105030587481?origin=resultslist&lt;/a&gt;</text>
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              <text>Seema, Christ University, Bengaluru, 560029, India; Radhakrishnan G.V., KIIT School of Management (KSOM), Bhubaneswar, India; Saeed A.M., Department of Mathematics, College of Science, Qassim University, Buraydah, 51452, Saudi Arabia; Banerjee D., Department of Artificial Intelligence and Data Science, Koneru Lakshmaiah Education Foundation, Andhra Pradesh, Green Fields, Vaddeswaram, India; Hundekari S., School of Computer Applications, Pimpri Chinchwad University, Pune, India; Chaudhary A., Department of Management, College of Business Administration, Princess Nourah Bint Abdulrahman University, P. O. Box 84428, Riyadh, 11671, Saudi Arabia</text>
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              <text>This study presents a comprehensive analyticalnumerical investigation of acoustic wave dispersion, attenuation, and energy dissipation in piezoelectricsemiconductor heterostructures composed of SiPZTSi and GePZTGe layers. The governing electromechanicaldiffusive equations for the coupled media are formulated with full continuity conditions, leading to a cubic characteristic equation solved using a hybrid irreducible Cardano method and functional iteration scheme. A detailed convergence analysis demonstrates stable, monotonic residual decay for both symmetric and asymmetric modes, confirming the robustness of the adopted solver. Numerical results reveal strong sensitivity of phase velocity, attenuation, and specific loss to wave number, semiconductor mobility, convergence and carrier concentration. GePZTGe consistently exhibits higher phase velocity, reduced attenuation, and lower dissipative losses than SiPZTSi, primarily due to the higher carrier mobility and weaker acoustoelectric drag in Ge. Additional parametric plots highlight the influence of semiconductor quality and PZT layer thickness on acoustic energy confinement. The findings provide actionable design guidelines for optimizing SAW-based filters, delay lines, sensors, and signal-processing devices, where low loss, high velocity, and efficient energy trapping are critical.  The Author(s), under exclusive licence to Springer-Verlag GmbH Austria, part of Springer Nature 2026.</text>
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              <text>ISSN: 15970; CODEN: AMHCA</text>
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              <text>Restricted Access; Hardcopy may be available in the library</text>
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