ItemArticle

Radiation attenuation parameters and intrinsic efficiency of a few semiconductor crystals for radiation detection applications

Title
Radiation attenuation parameters and intrinsic efficiency of a few semiconductor crystals for radiation detection applications
Creator
Kumar, P. Vipin; Vincent, Anagha P.; Prabhu, Srilakshmi; Bubbly, S.G.; Gudennavar, S.B.
Description
This study investigates the effectiveness of nine inorganic semiconductor crystals ? LiGaSe2, LiInSe2, CsHgInS3, SnS, GaTe, BiI3, Sb2Te3, Tl4CdI6, and TlBr ? for radiation detection applications based on photon and charged particle (electrons, protons, and heavy ions) interaction parameters. Mass attenuation coefficient (?/?), half value layer (HVL), relaxation length (?), effective atomic number (Zeff), electron density (Neff), equivalent atomic number (Zeq), and exposure buildup factor (EBF) were computed using PAGEX software. These results, along with their intrinsic efficiencies calculated, were compared with that of standard materials (NaI(Tl), CdZnTe, and CdTe). The ?/? values of the studied semiconducting materials are ranked in the decreasing order as: TlBr, Tl4CdI6, BiI3, CsHgInS3, Sb2Te3, GaTe, SnS, LiInSe2, and LiGaSe2. TlBr, Tl4CdI6, BiI3, and Sb2Te3 show superior photon detection capabilities compared to the reference materials. TlBr and Tl4CdI6 have the highest intrinsic efficiency across nearly all energy regions, while LiGaSe2 has the lowest. Interaction parameters like range and Zeff for charged particles were also computed using standard databases, with SnS and Sb2Te3 showing the least range for all the charged particles studied throughout the entire energy region. The study indicates that TlBr and Tl4CdI6 have strong potential for developing next-generation radiation detectors with enhanced sensitivity, addressing needs in healthcare and national security. 2025 Elsevier Ltd
Source
Applied Radiation and Isotopes;Volume;220;Issue;;Article No.;111747;
Date
01-01-2025
Publisher
Elsevier Ltd
Subject
Alpha; Electron; Proton; Radiation interaction parameters; Semiconductor crystals; X/?-ray
Coverage
Kumar P.V., Department of Physics and Electronics, CHRIST University, Karnataka, Bangalore, 560029, India; Vincent A.P., Department of Physics and Electronics, CHRIST University, Karnataka, Bangalore, 560029, India; Prabhu S., Department of Physics and Electronics, CHRIST University, Karnataka, Bangalore, 560029, India; Bubbly S.G., Department of Physics and Electronics, CHRIST University, Karnataka, Bangalore, 560029, India; Gudennavar S.B., Department of Physics and Electronics, CHRIST University, Karnataka, Bangalore, 560029, India
Rights
Restricted Access; Hardcopy may be available in the library
Relation
ISSN: 9698043; CODEN: ARISE
Format
online
Language
English
Type
Article

Citation

Kumar, P. Vipin; Vincent, Anagha P.; Prabhu, Srilakshmi; Bubbly, S.G.; Gudennavar, S.B., “Radiation attenuation parameters and intrinsic efficiency of a few semiconductor crystals for radiation detection applications,” CHRIST (Deemed To Be University) Institutional Repository, accessed June 18, 2026, https://archives.christuniversity.in/items/show/22195.

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