ItemArticle

Defect-Controlled Charge-Carrier Dynamics in M- and W-Type Hexaferrites

Title
Defect-Controlled Charge-Carrier Dynamics in M- and W-Type Hexaferrites
Creator
Yadav, Sandeep Kumar; Vijayaraghavan, R.; Jha, Vishwa Prakash; Pabba, Durga Prasad; Thirumurugan, Arun
Description
Defect engineering provides an effective means of tuning the charge transport in ferrimagnetic oxides. Here, we present a comparative study of M-type (BaFe12O19, SrFe12O19) and W-type (BaCo2Fe16O27, BaZn2Fe16O27) hexaferrites synthesized via solgel auto-combustion. Using XRD, SEM, TEM, dielectric measurements, and currentvoltage measurements, lattice defects are linked to charge-carrier conduction pathways. XRD confirmed phase-pure hexagonal structures with nanocrystallite sizes of 3336nm. High-resolution TEM revealed edge dislocations and planar strain fields in BaFe12O19, along with stacking-fault arrays in BaCo2Fe16O27, which create localized strain-induced potential fluctuations. The presence of dislocations and oxygen-vacancy defects promotes field-assisted thermionic emission with trap densities of ?1016 cm?3 and earlier onset of space-charge-limited conduction. Dielectric spectroscopy revealed MaxwellWagner relaxation, while the JE analysis indicated that Schottky emission dominates, with secondary space-charge-limited conduction occurring at high electric fields. The results demonstrate that oxygen-vacancy and strain-related defects serve as active transport mediators, providing a pathway to tune the electrical properties of ferrites for multifunctional electronic and energy applications. 2026 The American Ceramic Society.
Source
Journal of the American Ceramic Society;Volume;109;Issue;4;Article No.;e70743;
Date
01-01-2026
Publisher
John Wiley and Sons Inc
Subject
defects; ferrimagnetism; hexaferrite; Schottky emission
Coverage
Yadav S.K., Department of Physics and Electronics, Christ (Deemed to be University), Karnataka, Bangalore, India; Vijayaraghavan R., Department of Chemistry, School of Advanced Sciences, Vellore Institute of Technology, Tamil Nadu, Vellore, India; Jha V.P., School of Computer Science and Engineering, IILM University, Haryana, Gurugram, India; Pabba D.P., Departamento De Electricidad, Facultad De Ingenier, Universidad Tecnolica Metropolitana, Santiago, Chile; Thirumurugan A., Sede Vallenar, Universidad De Atacama, Vallenar, Chile
Rights
Restricted Access; Hardcopy may be available in the library
Relation
ISSN: 27820; CODEN: JACTA
Format
online
Language
English
Type
Article

Citation

Yadav, Sandeep Kumar; Vijayaraghavan, R.; Jha, Vishwa Prakash; Pabba, Durga Prasad; Thirumurugan, Arun, “Defect-Controlled Charge-Carrier Dynamics in M- and W-Type Hexaferrites,” CHRIST (Deemed To Be University) Institutional Repository, accessed June 20, 2026, https://archives.christuniversity.in/items/show/22975.

Output Formats