ItemArticle

Investigation of GaSb (p+) Pocket doped GaSb/Si Vertical TFETs for High-Frequency Analog Circuits

Title
Investigation of GaSb (p+) Pocket doped GaSb/Si Vertical TFETs for High-Frequency Analog Circuits
Creator
Sathishkumar, M.; Geege, A. Sharon; Samuel, T. S. Arun; Anand, I. Vivek; Ramkumar, K.
Description
Abstract: This paper reports on the design, modelling, and performance analysis of a GaSb/Si Heterojunction Vertical Tunnel Field-Effect Transistors (HVTFETs), employing band-to-band tunneling (BTBT). The device structure includes a p+-GaSb source and an intrinsic Si-channel/drain, forming a heterojunction that enhances tunneling efficiency due to the staggered band alignment. The obtained ON and OFF currents are 1 105 and 1 1018 A/?m. The saturation drain current (IDSat) rises with gate voltage, measured as: 2.7 108 A for VG = 0.5 V, 3.4 108 A for VG = 0.6 V and 3.9 108 A for VG = 0.7 V. The off-state current (IOFF) is very low (~1019 A) for all the VG values, indicating effective suppression of leakage current. The derived gm values for gate voltages of 0.5, 0.6, and 0.7 V are 5.4 105, 5.5 105, and 5.6 105 S, respectively, indicating effective gate control and transconductive efficiency for signal amplification. The combination of these characteristics would enable high fT and fmax, making the device suitable for broadband and millimeter-wave applications in the radio frequency (RF). The suggested GaSb/Si heterojunction vertical TFET has commendable analog/RF attributes, featuring a peak cutoff frequency (fT) of 8.91 GHz and a maximum oscillation frequency (fmax) of 5.8 GHz. The device demonstrates an intrinsic gain (Av) of 11.2 and a gain-bandwidth product (GBW) of 99.79 GHz, indicating substantial promise for RF front-end applications, including low-noise amplifiers, mixers, and voltage-controlled oscillators, as well as energy harvesting applications. Pleiades Publishing, Ltd. 2026.
Source
Semiconductors;Volume;60;Issue;3;pp.295-308
Date
01-01-2026
Publisher
Pleiades Publishing
Subject
analog/RF circuit; cutoff frequency and maximum oscillation frequency; GaSb/Si heterojunction; gate capacitance; high-frequency characteristics; output conductance; transconductance; Vertical-TFET
Coverage
Sathishkumar M., National Engineering College, K.R. Nagar, Tamilnadu, Kovilpatti, 628503, India; Geege A.S., National Engineering College, K.R. Nagar, Tamilnadu, Kovilpatti, 628503, India; Samuel T.S.A., National Engineering College, K.R. Nagar, Tamilnadu, Kovilpatti, 628503, India; Anand I.V., National Engineering College, K.R. Nagar, Tamilnadu, Kovilpatti, 628503, India; Ramkumar K., Christ University, Bengaluru, Karnataka, 560074, India
Rights
Restricted Access; Hardcopy may be available in the library
Relation
ISSN: 10637826;
Format
online
Language
English
Type
Article

Citation

Sathishkumar, M.; Geege, A. Sharon; Samuel, T. S. Arun; Anand, I. Vivek; Ramkumar, K., “Investigation of GaSb (p+) Pocket doped GaSb/Si Vertical TFETs for High-Frequency Analog Circuits,” CHRIST (Deemed To Be University) Institutional Repository, accessed June 19, 2026, https://archives.christuniversity.in/items/show/22997.

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