IN SEMICONDUCTOR MEDIA CAUSED BY DYNAMIC LOADING THROUGH MEMORY EFFECTS AND NONLOCAL FRAMEWORKS
- Title
- IN SEMICONDUCTOR MEDIA CAUSED BY DYNAMIC LOADING THROUGH MEMORY EFFECTS AND NONLOCAL FRAMEWORKS
- Creator
- Gaikwad, Kishor R.; Tiwari, Rakhi; Tripathi, Vivek; Singhal, Abhinav; Shivay, Om Namha; Abouelregal, Ahmed; Alhassan, Yazeed
- Description
- We investigate a novel meticulous heat transfer model to capture the photo-thermal-elastic interactions efficiently inside a nonlocalized semiconductor material affected from a dynamic thermal loading. For the purpose of apprehending memory and nonlocal effects during complex diffusion processes inside the semiconductor, the Atangana-Baleanu fractional derivative is established on the linearized coupled thermoelastic theory which involves thermal displacement gradient and temperature gradient among the constitutive variables. Laplace transform methodology is acquired for solving the problem. Later on, a suitable algorithm of numerical inversion of the Laplace transform is employed for achieving the computational results in physical domain. As per the graphical results, conclusions about the influences of significant parameters such as fractional parameter, photo-generated carrier life-span and the velocity of dynamic heat source on the dimensionless physical fields like temperature, displacement, stress and carrier density are constructed. Further, the utility of the current advanced heat transfer model is established by comparing the graphical results of physical fields under the current heat transfer theory with the old developed theories of heat transfer models having two phase lags and single phase lag parameter. All the graphical results are evaluated against distinct values of depth of the semiconductor media. We believe that this fine study will support researchers for obtaining promising and optimum results of real world problems where the photo-thermal effects inside the semiconductor are taken into account. 2026 The Authors, under license to MSP (Mathematical Sciences Publishers).
- Source
- Journal of Mechanics of Materials and Structures;Volume;21;Issue;1;pp.49-69
- Date
- 01-01-2026
- Publisher
- Mathematical Sciences Publishers
- Subject
- AB fractional derivative; delay times; nonlocal; photo-thermoelasticity; semiconductors
- Coverage
- Gaikwad K.R., PG Department of Mathematics, NES, Science College, Nanded, India; Tiwari R., Department of Mathematics, Babasaheb Bhimrao Ambedkar Bihar University, Muzaffarpur, India; Tripathi V., Department of Computer Science Engineering CSE-AI, IIMT College of Engineering, Greater Noida, India; Singhal A., Department of Mathematics, Christ University, Bengaluru, Bengaluru, India; Shivay O.N., Department of Mathematics, Vellore Institute of Technology Chennai, Chennai, India; Abouelregal A., Department of Mathematics, Jouf University, Sakaka, 72388, Saudi Arabia; Alhassan Y., Department of Mathematics, Jouf University, Sakaka, 72388, Saudi Arabia
- Rights
- Restricted Access; Hardcopy may be available in the library
- Relation
- ISSN: 15593959;
- Format
- online
- Language
- English
- Type
- Article
Collection
Citation
Gaikwad, Kishor R.; Tiwari, Rakhi; Tripathi, Vivek; Singhal, Abhinav; Shivay, Om Namha; Abouelregal, Ahmed; Alhassan, Yazeed, “IN SEMICONDUCTOR MEDIA CAUSED BY DYNAMIC LOADING THROUGH MEMORY EFFECTS AND NONLOCAL FRAMEWORKS,” CHRIST (Deemed To Be University) Institutional Repository, accessed June 18, 2026, https://archives.christuniversity.in/items/show/23371.