A multi-layer memory enriched staticmemory system /
Title
A multi-layer memory enriched staticmemory system /
Subject
Electronics
Description
Patent Number: 202141039100, Applicant: Debarka Mukhopadhyay.
The present invention is configured with the generation of multiprocessor core of each 15 bit CAM cell and a section works at a lower supply area which will drive a part to work at a more prominent induced voltage for the CAM core processor. The present device is configured in such a way so that no level converters are required. The system operates avoiding the power overhead and low supply area as illustrated in Fig1. This process is used assorting voltage with less area interface inside the CAM cells, related by the applying product on D-FF. The match line indicates the search word and stored word are indistinguishable (the match case) or are extraordinary (a confounding case, or miss) of the CAM cell.
The present invention is configured with the generation of multiprocessor core of each 15 bit CAM cell and a section works at a lower supply area which will drive a part to work at a more prominent induced voltage for the CAM core processor. The present device is configured in such a way so that no level converters are required. The system operates avoiding the power overhead and low supply area as illustrated in Fig1. This process is used assorting voltage with less area interface inside the CAM cells, related by the applying product on D-FF. The match line indicates the search word and stored word are indistinguishable (the match case) or are extraordinary (a confounding case, or miss) of the CAM cell.
Creator
Mukhopadhyay, Debarka.
Publisher
Intellectual Property India
Date
2021
Language
English
Type
Patent
Collection
Citation
Mukhopadhyay, Debarka., “A multi-layer memory enriched staticmemory system /,” CHRIST (Deemed To Be University) Institutional Repository, accessed September 16, 2024, https://archives.christuniversity.in/items/show/2485.