Architecture of FTO/n-CdS/p-SnSe1-xOx/Au Heterojunction Thin Film Diodes by Thermal Evaporation
- Title
- Architecture of FTO/n-CdS/p-SnSe1-xOx/Au Heterojunction Thin Film Diodes by Thermal Evaporation
- Creator
- John B.; Vardhurajaperumal S.
- Description
- In this report, FTO/n-CdS/p-SnSe1-xOx/Au heterojunction diodes were fabricated using a homemade precursor followed by dry milling with a facile thermal evaporation method under oxygen atmosphere (10? 2mbar) for the first time. The chemical purity (45.35:45.07:9.58 at.%) and microstructure of the deposited films and device were characterized by energy dispersive x-ray analysis, x-ray photoelectron spectroscopy, and scanning electron microscopy. The crystallographic parameters, a = 11.512 b = 4.163and c = 4.452 with orthorhombic crystal structure and monophase nature were analyzed by powder x-ray diffraction. Raman spectroscopy revealed the vibrational modes, and UVVis-NIR spectroscopy was used to study the direct nature of optical absorption with a band gap of 1.14eV. The currentvoltage (I-V) characteristics of the semiconductor diode were measured in room temperature (25C) and revealed rectifying properties and the cut-off voltage for the device, 0.57V. The obtained results highlight that the use of a p-SnSe1-xOx (SSO) layer as an interface between n-CdS/Au diodes exhibits excellent rectifying behavior and enhanced diode performance. Therefore, the p-SSO layer is a suitable material for heterojuction diodes and optoelectronic switches. Graphical Abstract: [Figure not available: see fulltext.]. 2022, The Minerals, Metals & Materials Society.
- Source
- Journal of Electronic Materials, Vol-51, No. 12, pp. 6827-6834.
- Date
- 2022-01-01
- Publisher
- Springer
- Subject
- currentvoltage characteristics; diode; Oxygen-doped SnSe thin film; thermal evaporation
- Coverage
- John B., Department of Physics and Electronics, CHRIST (Deemed to be University), Karnataka, Bangalore, 560029, India; Vardhurajaperumal S., Center for Nanoscience and Engineering (CeNSE), Indian Institute of Science, Bangalore, India
- Rights
- Restricted Access
- Relation
- ISSN: 3615235; CODEN: JECMA
- Format
- Online
- Language
- English
- Type
- Article
Collection
Citation
John B.; Vardhurajaperumal S., “Architecture of FTO/n-CdS/p-SnSe1-xOx/Au Heterojunction Thin Film Diodes by Thermal Evaporation,” CHRIST (Deemed To Be University) Institutional Repository, accessed February 25, 2025, https://archives.christuniversity.in/items/show/14852.