An analytical model for a TFET with an n-doped channel operating in accumulation and inversion modes

Title

An analytical model for a TFET with an n-doped channel operating in accumulation and inversion modes

Creator

Ranjith R.; Suja K.J.; Komaragiri R.S.

Description

The tunnel field-effect transistor (TFET) is an ambipolar device that conducts current with the channel in both accumulation and inversion modes. Analytical expressions for the channel potential and current in a TFET with an n-doped channel when operating in the accumulation and inversion modes are proposed herein. The potential model is derived by solving the two-dimensional (2D) Poisson equation using the superposition principle while considering the charges present in the channel due to electron or hole accumulation along with the depletion charges. An expression for the tunneling current corresponding to the maximum tunneling probability is also derived. The tunneling current is obtained by analytically calculating the minimum tunneling length in a TFET when operating in the accumulation or inversion mode. The results of the proposed potential model is compared with technology computer-aided design (TCAD) simulations for TFET with various dimensions, revealing good agreement. The potential and current in an n-type TFET (nTFET) obtained using the proposed models are also analyzed. 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.

Source

Journal of Computational Electronics, Vol-20, No. 3, pp. 1125-1136.

Date

2021-01-01

Publisher

Springer

Subject

Analytical model; Band-to-band tunneling (BTBT); Poissons equation; Simulations; Technology computer-aided design (TCAD); Tunnel field-effect transistor (TFET)

Coverage

Ranjith R., Department of Electronics and Communication Engineering, School of Engineering and Technology, CHRIST (Deemed to be University), Bengaluru, India; Suja K.J., Department of Electronics and Communication Engineering, National Institute of Technology Calicut, Kozhikode, India; Komaragiri R.S., Department of Electronics and Communication Engineering, Bennett University, Greater Noida, India

Rights

Restricted Access

Relation

ISSN: 15698025

Format

Online

Language

English

Type

Article

Identifier

https://doi.org/10.1007/s10825-021-01683-x

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85104732940&doi=10.1007%2fs10825-021-01683-x&partnerID=40&md5=46a0626aa0cff684bec82dde18f310f7