Architecture of monophase InSe thin film structures for solar cell applications

Title

Architecture of monophase InSe thin film structures for solar cell applications

Creator

Teena M.; Kunjomana A.G.; Ramesh K.; Venkatesh R.; Naresh N.

Description

Control of microstructural evolution during the crystallization of InSe thin films is an inevitable strategy to mold their fundamental properties and potential for the fabrication of solar cells. Impact of annealing as well as substrate temperature on the crystallization progress and physical characteristics of thermally evaporated InSe was examined systematically, which eventually dictates the overall performance of resulting device. Structural and compositional characterizations have been thoroughly investigated by X-ray diffraction and energy dispersive X-ray analyses. InSe films form hexagonal structure with a preferred orientation of crystallites along the (004) direction upon crystallization. The layer of InSe is formed by two concomitant processes, deposition and recrystallization. Application of heat treatment resulted in topographical modification, which was probed by an atomic force microscope. Surface roughness was enhanced due to the influence of temperature and thereby the growth of grains. Investigations of electrical and optical properties, thus provided ample evidence for the use of crystallized monophase InSe as an absorber layer in photovoltaic conversion devices. Carrier concentration and mobility of charge carriers estimated from the Hall measurements were found to be 19.43020cm?3 and 2.01cm2V?1s?1 respectively. Moreover, this research work explores power conversion efficiency of p-InSe/n-CdS heterojunction solar cells. 2017 Elsevier B.V.

Source

Solar Energy Materials and Solar Cells, Vol-166, pp. 190-196.

Date

2017-01-01

Publisher

Elsevier B.V.

Subject

Annealing; Electrical properties; Optical properties; Substrate temperature; Surface properties; Thin films

Coverage

Teena M., Department of Physics, Christ University, Bengaluru, 560029, India, Research and Development Centre, Bharathiar University, Coimbatore, 641046, India; Kunjomana A.G., Department of Physics, Christ University, Bengaluru, 560029, India; Ramesh K., Department of Physics, Indian Institute of Science, Bengaluru, 560012, India; Venkatesh R., Department of Physics, Indian Institute of Science, Bengaluru, 560012, India; Naresh N., Department of Physics, Indian Institute of Science, Bengaluru, 560012, India

Rights

Restricted Access

Relation

ISSN: 9270248; CODEN: SEMCE

Format

Online

Language

English

Type

Article

Identifier

https://doi.org/10.1016/j.solmat.2017.03.027

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85016278894&doi=10.1016%2fj.solmat.2017.03.027&partnerID=40&md5=6aa156bb171d9806f684f2e01235a20c