Effect of Doping in Aluminium Nitride (AlN) Nanomaterials: A Review

Title

Effect of Doping in Aluminium Nitride (AlN) Nanomaterials: A Review

Creator

SnehaThomas E.; Ranjith R.

Description

Piezoelectric materials can generate electrical charges when subjected to mechanical pressure through the piezoelectric effect. In addition to generating electricity from environmental vibrations, they are also used as nano energy generators for micro electro mechanical systems (MEMS). Aluminum Nitride (AlN) with a doping element exhibits unique physical and chemical properties. It is used to manufacture many electromechanical devices. They are ideal candidates for many applications, including MEMS resonators and microwave filters, due to their large piezoelectric coefficient and low resistance. A number of material properties led to its selection, including high thermal conductivity, good mechanical strength, high resistance, corrosion resistance, and the largest piezoelectric coefficient. A piezoelectric coefficient d33 characterizes the piezoelectric response of AlN thin films. By doping this material, a wide range of applications have been explored. The Electrochemical Society

Source

ECS Transactions, Vol-107, No. 1, pp. 15229-15237.

Date

2022-01-01

Publisher

Institute of Physics

Coverage

SnehaThomas E., Department of Electronics and Communication Engineering, CHRIST (Deemed to be University), Bengaluru, India, Department of Applied Electronics and Instrumentation Engineering, Mount Zion College of Engineering, Kadammanitta, Kerala, India; Ranjith R., Department of Electronics and Communication Engineering, CHRIST (Deemed to be University), Bengaluru, India

Rights

Restricted Access

Relation

ISSN: 19386737; ISBN: 978-160768539-5

Format

Online

Language

English

Type

Conference paper

Identifier

https://doi.org/10.1149/10701.15229ecst

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