Advancement and Challenges of Biosensing Using Field Effect Transistors

Title

Advancement and Challenges of Biosensing Using Field Effect Transistors

Creator

Thriveni G.; Ghosh K.

Description

Field-effect transistors (FETs) have become eminent electronic devices for biosensing applications owing to their high sensitivity, faster response and availability of advanced fabrication techniques for their production. The device physics of this sensor is now well understood due to the emergence of several numerical modelling and simulation papers over the years. The pace of advancement along with the knowhow of theoretical concepts proved to be highly effective in detecting deadly pathogens, especially the SARS-CoV-2 spike protein of the coronavirus with the onset of the (coronavirus disease of 2019) COVID-19 pandemic. However, the advancement in the sensing system is also accompanied by various hurdles that degrade the performance. In this review, we have explored all these challenges and how these are tackled with innovative approaches, techniques and device modifications that have also raised the detection sensitivity and specificity. The functional materials of the device are also structurally modified towards improving the surface area and minimizing power dissipation for developing miniaturized microarrays applicable in ultra large scale integration (ULSI) technology. Several theoretical models and simulations have also been carried out in this domain which have given a deeper insight on the electron transport mechanism in these devices and provided the direction for optimizing performance. 2022 by the authors.

Source

Biosensors, Vol-12, No. 8

Date

2022-01-01

Publisher

MDPI

Subject

biosensors; Debye length; field effect transistors; functionalization; screening; sensitivity; specificity

Coverage

Thriveni G., Department of Electronics and Communication Engineering, School of Engineering and Technology, CHRIST (Deemed to be University), Mysore Road, Kumbalgodu, Bengaluru, 560074, India; Ghosh K., Centre for Nanoelectronics and VLSI Design, Vellore Institute of Technology, Vandalur Kelambakkam Road, Chennai, 600127, India, Vellore Institute of Technology, School of Electronics Engineering, Vandalur Kelambakkam Road, Chennai, 600119, India

Rights

All Open Access; Gold Open Access; Green Open Access

Relation

ISSN: 20796374; PubMed ID: 36005043; CODEN: BISSE

Format

Online

Language

English

Type

Review

Identifier

https://doi.org/10.3390/bios12080647

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85137127533&doi=10.3390%2fbios12080647&partnerID=40&md5=5e69c15cc53200417800b8335ce06662