ItemArticle

A Novel Investigation on p-GaN GATE with and without AlGaN Back Barrier for AlGaN/GaN High Electron Mobility Transistors

Title
A Novel Investigation on p-GaN GATE with and without AlGaN Back Barrier for AlGaN/GaN High Electron Mobility Transistors
Creator
Arunraja, A.; Kishorekumar, R.; Sangeetha, D.; Dharmaprakash, R.; Bharaty, K.S.; Balamanikandan, A.
Description
p-GaN layers are relatively mature and controllable, making p-GaN HEMTs the leading structure that is most likely to be commercialized. The analysis of the gate design parameters, such as transconductance, breakdown voltage, threshold voltage, Johnson Figure of Merit (JFOM), and gate turn-on current of p-GaN devices, which determine the on-state characteristics, needs to be investigated. The AlGaN barrier, p-GaN gate, GaN, AlGaN back barrier, and SiC substrate constitute the structure of p-GaN, which is operated in the E-mode. The use of an AlGaN back barrier reduces the punch-through current. Silicon carbide (SiC) is used as a substrate to have lower lattice mismatch with the nitride layer. The transfer characteristics, transconductance, threshold voltage, breakdown voltage, and JFOM are analyzed. The device demonstrates a positive threshold voltage that varies linearly with changes in ambient temperature. In addition, the device featuring an AlGaN back barrier shows a higher breakdown voltage of 105 V, in contrast to the device lacking a back barrier. 2025, Society for Communication and Computer Technologies. All rights reserved.
Source
Journal of VLSI Circuits and Systems;Volume;7;Issue;1;pp.167-175
Date
01-01-2025
Publisher
Society for Communication and Computer Technologies
Subject
Ambient Temperature; Back Barrier; E-mode; p-GaN Gate; Silicon Carbide Transconductance; Threshold Voltage
Coverage
Arunraja A., Department of Electronics and Communication Engineering, Christ University, Karnataka, Bengaluru, India; Kishorekumar R., Department of Electronics and Communication Engineering, Christ University, Karnataka, Bengaluru, India; Sangeetha D., Department of Computer Science and Applications, Dr. Vishwanath Karad MIT World Peace University, Pune, India; Dharmaprakash R., Department of Elecrical and Electronics Engineering, Panimalar Engineering College, Chennai, India; Bharaty K.S., Department of Electrical and Electronics Engineering, School of Engineering, Mohan Babu University, Tirupathi, India; Balamanikandan A., Department of Electronics and Communication Engineering, School of Engineering, Mohan Babu University, Tirupathi, India
Rights
All Open Access; Gold Open Access
Relation
ISSN: 25821458;
Format
online
Language
English
Type
Article

Citation

Arunraja, A.; Kishorekumar, R.; Sangeetha, D.; Dharmaprakash, R.; Bharaty, K.S.; Balamanikandan, A., “A Novel Investigation on p-GaN GATE with and without AlGaN Back Barrier for AlGaN/GaN High Electron Mobility Transistors,” CHRIST (Deemed To Be University) Institutional Repository, accessed June 19, 2026, https://archives.christuniversity.in/items/show/23488.

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