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Group Key Management Techniques forSecure Load Balanced Routing Model
Remote sensor organizations (WSNs) assume a vital part in giving ongoing information admittance to IoT applications. Be that as it may, open organization, energy limitation, and absence of brought together organization make WSNs entirely defenseless against different sorts of pernicious assaults. In WSNs, recognizing vindictive sensor gadgets and dispensing with their detected data assume a vital part for strategic applications. Standard cryptography and confirmation plans cannot be straightforwardly utilized in WSNs on account of the asset imperative nature of sensor gadgets. In this manner, energy productive and low idleness procedure is needed for limiting the effect of malignant sensor gadgets. In this research work presents a secured and burden balanced controlling contrive for heterogeneous bunch-based WSNs. SLBR shows a predominant trust-based security metric that beats the issue when sensors proceed to influence from extraordinary to terrible state and the other way around; besides, SLBR alters stack among CH. In this way, underpins fulfilling superior security, allocate transmission, and vitality efficiency execution. Trials are driven to calculate this presentation of developed SLBR demonstrate over existing trust-based controlling show, particularly ECSO. The result accomplished appears SLBR demonstrate fulfills favored execution over ECSO as distant as vitality capability (i.e., arrange lifetime considering to begin with sensor contraption downfall and total sensor contraption passing), correspondence overhead, throughput, allocate planning idleness, and harmful sensor contraption mis-classification rate and recognizable verification. 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. -
Group Movie Recommendations via Content Based Feature Preferences
International Journal of Scientific & Engineering Research Vol. 4, Issue 2, pp.1-5 ISSN No. 2229-5518 -
Group signature based security technique for privacy identity information protection in blockchain /
Patent Number: 202121031204, Applicant: Gauri Arun Varade.
On cryptographic algorithms blockchain is a highlight point dispersed record innovation dependent. By factual techniques, information mining and sociological mining has made clients protection face significant dangers the straightforward and open
blockchain record enhanced. -
Group signature based security technique for privacy identity information protection in blockchain /
Patent Number: 202121031204, Applicant: Gauri Arun Varade.
On cryptographic algorithms blockchain is a highlight point dispersed record innovation dependent. By factual techniques, information mining and sociological mining has made clients protection face significant dangers the straightforward and open blockchain record enhanced. -
Growth and characterization of certain III-VI compound semiconducting crystals
The rapid advances in solid-state physics over the last few decades have uncovered many effects in crystals,which have formed the basis of large industries. the availability of crystals from the natural resources is inadequate to meet the need of these industries and also does not give sufficient variety. This led to a great deal of research work on the method of production of crystals artificially. -
Growth and characterization of chalcogenide crystals by vapour method
A horizontal linear gradient two zone furnace was designed and employed to grow single crystals of indium telluride by Physical Vapour Deposition (PVD) method. It was calibrated for various trials including, series and parallel combinations of coils, and set temperatures. Systematic growth runs for chalcogenide crystals were performed by varying the source and growth temperatures. Crystals of different sizes and morphologies were obtained. The morphology and chemical analysis of the grown crystals were investigated by Scanning Electron Microscope (SEM) and Energy Dispersive Analysis using X-rays (EDAX). The hardness of the crystals was estimated using a Vickers microhardness tester. 2011 American Institute of Physics. -
Growth and characterization of glycine potassium nitrate NLO crystals
Single crystals of glycine potassium nitrate were grown using slow evaporation technique. The solutions were prepared mixing glycine with potassium nitrate in different ratios stirring continuously for an hour to get a saturated solution. It was then kept at room temperature for controlled evaporation. Optically clear and well shaped crystals were obtained and these were characterized by (FTIR) studies, EDAX and X-ray powder diffraction. 2011 American Institute of Physics. -
Growth and characterization of InBi1-xSbx InBi1-xTex and γ-In2Se3 crystals
Theory and innovating practices of crystal growth heralded cutting edge breakthroughs in the production of proficient crystals towards the advancement of science and technology. Unique characteristics and band structure provide great flexibility for structural design and band gap engineering of indium bismuthide (InBi) compounds. Substitution of antimony and tellurium elements results in the transition of InBi to a semiconducting state with narrow energy gap, making it suitable for optoelectronic devices. Need of eco-friendly sustainable processes concerning the elimination of hazardous materials bring and#947;-In2Se3 in the forefront of photovoltaic industry, due to its wide band gap as well as n-type conductivity. Thus, realizing the immense potential attributes of InBi1-xSbx, InBi1-xTex (x = 0-0.2) and and#947;-In2Se3 crystals, the present research was focussed on pioneering their growth and characterization.Horizontal directional solidification (HDS), being the versatile, inexpensive melt growth technique, was employed for obtaining InBi1-xSbx, and InBi1-xTex (x = 0-0.2) crystals. On the other hand, closed tube sublimation (CTS) was found to be most effective for deposition of and#947;-In2Se3 crystals. Platelet and spherulitic morphologies of and#947;-In2Se3 crystals have been grown by the vapor deposition for the first time, under different growth environments. Morphology, structure and quality of the as-grown crystals were studied, employing various scientific procedures such as X-ray diffraction (XRD), energy dispersive analysis by X-rays (EDAX), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM). Transport parameters, melting point and phase purity have been evaluated with the aid of Hall effect measurement, four probe set up, differential scanning calorimetry (DSC) and Raman spectroscopy. Vickers indentation testing was utilized for the evaluation of microhardness and deformation characteristics. -
Growth and Characterization of Indium Monotelluride Crystals
Semiconductors have become an inevitable part of human life. The beginning of the modern electronic technology goes back to the invention and elaboration of the semiconductor-based transistor by Bardeen, Brattain and Shockley in 1948. Thereafter, electronics industry has grown and become one of the worlds largest commercial establishments. The increasing demands for smaller electronic devices with improved performance at lower costs drive the conventional silicon-based technology to its limits. To satisfy the requirements from the industry and to extend the applications of semiconductor devices, new materials and fabrication techniques have to be used. The development, specification and quality control of these materials often require a very delicate crystal growth process and specific characterizations, which will be critical to a successful design of an electronic device. The knowledge of structural, electrical and mechanical properties of materials is essential for making use of them in various electronic devices. The operating abilities of a large part of modern technological hardware are based on active and/or passive crystalline core pieces. The fabrication of such crystals is normally connected with the well established growth methods such as Bridgman, Czochralski, Verneuil, zone melting, top seeded solution growth (TSSG), re-crystallization techniques, etc. Bulk crystal growth techniques are used to grow large crystals from which substrates are sliced. Substrate availability is a critical component in the success of a technology. Hence, even in this era of thin films and epitaxial layers, bulk crystal growth from melt still upholds its significance and plays an important role in the development of semiconductor-based technologies. Solar cell technology, as a sustainable source of energy, has shown a tremendous growth in recent years. The most widely used commercial solar cells are made from single crystalline silicon and have efficiencies up to 26.5%. However, such single crystalline solar cells are relatively expensive with the silicon itself making up to 20-40% of the final cost. In the search for low-cost alternatives to crystalline silicon, a great deal of work is being carried out in tailoring the applicability of compound semiconductor materials, which offer advantages over silicon. Indium monotelluride (InTe) is a III-VI layered semiconductor, which is particularly suitable for photovoltaic use, because of its suitable band gap (1.16 eV), optical and transport properties. In addition, its cleaved surfaces do not need any additional treatment for p??n junction formation and are chemically inert under ambient conditions. The crystal structure of InTe is tetragonal with lattice parameters, a = b = 8.454 ??, and c = 7.152 ??. The direct nature of transition supports the maximum efficiency of the InTe based opto-electronic devices. Indium monotelluride (InTe) crystals have been crystallized using directional freezing technique by employing a two zone horizontal furnace. The compound charge used for the growth was synthesised from its constituent elements (In and Te). The structural and chemical investigations of the grown samples were performed using powder x-ray diffraction (XRD) technique and energy dispersive analysis by x-rays (EDAX). The dielectric constant, loss factor, AC conductivity and optical band gap of the grown InTe crystals were estimated from the capacitance measurements in the temperature range, 35-140??C. The frequency dependence of these dielectric parameters has been studied to understand the mechanism behind conduction. The mechanical strength of the cleaved samples of indium monotelluride was investigated using Vickers microhardness tester in the load range, 5-50 g, and the results obtained are discussed. The present research work titled ??Growth and characterization of indium monotelluride crystals has been organized into four chapters. Chapter 1 gives a brief introduction about the concepts of nucleation with regard to the crystal growth of semiconducting materials. The effects of thermodynamical parameters on the growth of crystals are explained. The theories of crystal growth along with the factors affecting the crystallization phenomenon are described in chapter 2. The principle behind the different crystal growth processes is outlined. An account on the various crystal growth techniques highlighting their special features is also given. A review of the present national / international status on the growth and characterization of InTe is presented. The description of directional freezing method, experimental procedure and the various characterization techniques used for the study are presented in chapter 3. Chapter 4 covers the results and discussions of the research findings. It ends with a reference section, wherein the literature reviews used are listed as per the international standards and the order of its appearance in the text. -
Growth and Characterization of Sb2Se3 and SnSe2 Crystals for Photovoltaic Applications
Tremendous development in crystal growth technology led to the production of good newlinequality samples for the design and fabrication of optoelectronic devices. As naturally available solids exhibit undesirable characteristics, the present research work deals with the artificial synthesis and characterization of defect free binary layered chalcogenide materials newline(LCMs) for photovoltaic (PV) applications. Antimony selenide (Sb2Se3) and tin diselenide newline(SnSe2) have gained special attention in the PV industry due to their eco-friendly, sustainable, and non-hazardous nature as well as the salient features such as moderate melting temperature, p-type conductivity with direct transition, optimum band gap and high newlineabsorption coefficient. Therefore, cost-effective synthesis was implemented to engineer bulk Sb2Se3 and SnSe2 crystals for the enhancement of optoelectronic parameters. Single crystal growth from melt allows the fabrication of large size samples under controlled environment. It gives rise to complexities in maintaining stable temperature for crystallization and newlineachieving chemical homogeneity, if multiple elements are present in the system. The newlinechallenges associated with Bridgman-Stockbarger and Czochralski methods for preparing bulk crystals include irregular heat flow, mechanical movement of furnace or crucible, thermal stress, etc. Moreover, reactivity of the melted material with the ampoule leads to structural irregularities. Hence, horizontal normal freezing (HNF), the facile and inexpensive melt growth technique was employed to explore the suitability of cleaved samples. Most of the vapor phase synthesis methods, especially, the chemical vapor deposition (CVD) deteriorates material quality, which adversely affects the physical properties due to the presence of contamination or foreign elements. But, the physical vapor deposition (PVD) process is favorable as it offers feasible instrumentation and yields stoichiometric specimens with supreme quality and fine-tuned characteristics. -
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Growth and microindentation analysis of pure and doped Sb2 Se3 crystals
Pure and doped antimony selenide (Sb2 Se3, Sb 2 Se2.8 Te0.2, and Sb2 Se 2.6 Te0.4) crystals have been grown from melt by the Bridgman Stockbarger method. X-ray powder diffraction analysis was carried out to determine the lattice parameters of the grown samples. The morphology of cleavage planes was observed using SEM. Energy dispersive analysis by X-rays (EDAX) was done to find out the chemical composition of the grown samples. Correlation of microhardness with other mechanical characteristics such as toughness, brittleness, and yield strength, has been investigated. The effects of Te doping on the mechanical behaviour and energy gap were also studied on the cleavage faces. Ti?tak. -
Growth and physical properties of sb2 te3 and related thermoelectric materials
Research on crystal growth and characterization is inevitable to meet the requirements of the technological world, as there is a great demand for good quality samples free from flaws for application in newlinevarious fields which cannot be met by natural resources. The synthesis of newlinebulk crystals of Sb2Te3 compounds has intrigued the attention of the researchers in the present work, due to their diverse properties which provide boundless scope to develop innovative approaches towards the newlinedevelopment of devices with improved thermoelectric (TE) efficiency. The green technology of conversion of waste heat to electric current by the TE phenomena offers a noise-free alternative with low mechanical newlineand conduction losses for small scale refrigeration and power generation modules. Though, thermoelectric devices offer better reliability and durability, one of the major challenges is to develop a material system newlinewith high figure of merit (ZT) in the variable temperature ranges. From the research reports it is evident that, generally for scientific studies, conventional melt methods were used to grow bulk Sb2Te3 crystals, where nonstoichiometry, polycrystallinity and multi-phase formation raise problems. Furthermore, large fluctuations in TE properties have been exhibited by single crystals synthesized from the melt, which preclude their uses in devices. The ability to control as well as engineer various newlineproperties of Sb2Te3 depends on the choice of growth method, experimental tools and processes. Even though substantial work has been published on the studies of cleaved samples of crystals grown from the melt, the growth mechanism and TE investigations on vapor deposited platelet structures of Sb2Te3-xSx and Sb2-xInxTe3 have not been investigated so far. With the prime focus on vapor deposition as an alternative to melt methods to produce defect free, good quality stoichiometric and mechanically stable crystals with improved ZT, the research was aimed at growth and characterization of Sb2Te3 and related newlinethermoelectric materials. -
Growth of cerium oxide nanorods by hydrothermal method and electrochromic properties of CeO2/WO3 hybrid thin films for smart window applications
Innovative electrochromogenic nanomaterials such as composite materials and also hybrid films can improve electrochromic performance, because of their potential application qualities in electronic, low-power screens, automotive anti-reflect mirrors, and smart windows. In this study, we used a hydrothermal method to used grow the CeO2 nanorods both with and without HCl added to the solution. And also, DC magnetron sputtering was used to deposit the tungsten oxide films on the cerium oxide nanorods. The surface plasmon effect changes with the size of CeO2 Nanorods, and this phenomenon influences electrochromic outcomes. The electrochromic characteristics of CeO2/WO3 nanostructures on FTO-coated glass are examined in the visible spectrum to use a 0.5 M concentration of H2SO4 as such electrolyte. At 600 nm, these structures produce significant optical modulation (50 %) and coloring efficiency (11.60 cm2/C at 700 nm). 2022 -
Growth of Indian cement industry, its environment impact and emerging alternatives
The present study provides a detailed review on growth of Indian cement industry, its environmental implications of cement production and its significant influence on the future trajectory of the Indian concrete industry. The Indian cement sector, a vital contributor to the nation's economy, faces a dual challenge of meeting the growing demand for construction materials while mitigating its environmental footprint. The study delves into the industry's current status as the world's second-largest cement producer and its impact on various sectors, including employment, GDP contribution, and dependence on real estate and infrastructure. The paper identifies key obstacles hindering the Indian concrete industry's full potential, such as a slowdown in real estate development, low industrial investment, regulatory changes, and constraints on resource extraction. Despite the industry's promising growth, the looming threats from emerging technologies and increasing environmental concerns, particularly related to greenhouse gas emissions, necessitate a strategic shift towards sustainability. A central focus of the research is the urgent need for the Indian concrete industry to address its environmental impact, specifically the 7% contribution to global greenhouse gas emissions. The study explores the industry's role in creating carbon-neutral concrete by 2050 and emphasizes the importance of collaboration with policymakers, financial institutions like the International Finance Corporation (IFC), and end users in achieving this ambitious goal. The study reveals the comprehensive resource for industry stakeholders, and researchers interested in understanding the environmental implications of cement production and charting a sustainable course for the future of the Indian concrete industry and emerging alternatives. 2024, National Institute of Science Communication and Policy Research. All rights reserved. -
Growth of mobile applications and the rise of privacy issues
Mobile apps are used by more and more internet users for daily chores, but processing personal data with them poses a major security risk. The wide range of data and sensors in mobile devices, the use of different types of identifiers and the increased ability to monitor consumers, the complex mobile application ecosystem and application developer limitations, and the extensive use of third-party technologies and services, are the main risks. Privacy concerns extend beyond mobile users. Corporate executives need fast, global access to their database. White goods/smart building equipment suppliers offer mobile apps for remote use. This research study will integrate these concerns. Due to these factors, smartphone applications have struggled to enforce the General Data Protection Regulations (GDPR) data protection rules. Mobile app designers and service providers may struggle to meet GDPR rules for data disclosure and permission, data protection by design and default, and operational secrecy. Copyright 2024 Inderscience Enterprises Ltd. -
Growth of online social networking and artificial intelligence in digital domain
In this millennium years of technology, machinery is evolving daily. There is plethora of things being affected by this evolution. One of which is our practices of social networking which is largely veering to the internet. Internet social networking has become one of the biggest buzzwords. From a child to an old person, everyone is on these social networking sites and applications. Within the span of 5 to 10 years these so-called Internet social networking sites and applications have taken over the real social gathering or meetings. Now with single click you can buy or sell goods and services at any place and any time. People can connect to one another even when far from home. The pandemic times and demonetization are the two instances that made everyone switch to and accustomed to the aspects of social networking. In the particular research paper, the researcher will put forth how data privacy and security is one of the biggest concerns in this social networking. Secondly, the researcher will understand the role of Artificial Intelligence in Online Social networking and whether it is helpful or not. 2023 Author(s). -
Growth of some urinary crystals and studies on inhibitors and promoters. II. X-ray studies and inhibitory or promotery role of some substances
Best conditions were established for the gel growth of three urinary crystals viz., calcium oxalate monohydrate, calcium hydrogen phosphate dihydrate and ammonium magnesium phosphate hexahydrate. The crystals grown were characterized using single crystal X-ray diffraction techniques and density measurements. Crystal growth experiments were carried out by incorporating the extracts or juices of some natural products in the gel media. By carefully observing the changes in the growth of crystals (compared to control experiments carried out at the same conditions), results about the inhibitory or promotery role of the substance incorporated were obtained. It was found that the extracts or juices of many of the naturally occurring substances have interesting inhibitory or promotery effects. These results may have useful applications in the treatment of recurrent stone patients. -
Growth Of ZnSnN2 Semiconductor Films For Gas Sensor Applications
ZnSnN2 is a member of class of nitride semiconductors which have the additional benefits of earth abundance and non-toxicity. For device applications, NH3 gas detecting senor, which finds use in chemical, pharmaceutical, and food process industries, are fabricated with zinc-tin-nitride (ZnSnN2) thin-films on glass substrate by making use of metal as contacts. The ZnSnN2 sensor is found extremely selective to ammonia (NH3) amongst other gases like ethanol, NO2, H2S and exhibited good detecting responses at room temperature. There are many ways to develop thin films of ZnSnN2, and hence in this work we are trying to find a cost effective, feasible and easier method of synthesis, i.e., chemical vapor deposition method. The first step was the optimization of process parameters to grow Zinc-Tin (ZnSn) thin-films. Later, optimization of the process parameters for the growth of compound ZnSnN2 was completed. The grown films are characterized by material quality using X-Ray Diffraction and UV- Vis spectroscopy. 2022 American Institute of Physics Inc.. All rights reserved.